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IPB042N10N3GE818XT

IPB042N10N3GE818XT
Mfr. #:
IPB042N10N3GE818XT
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 100V 100A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB042N10N3GE818XT Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB042N10N3GE818XT Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
3.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
117 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
214 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
73 S
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
59 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
48 ns
Typische Einschaltverzögerungszeit:
27 ns
Teil # Aliase:
IPB042N10N3GE8187ATMA1 SP000939332
Gewichtseinheit:
0.139332 oz
Tags
IPB042N10N3GE, IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***nell
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N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB042N10N3GE818XT
DISTI # 726-IPB042N10N3GEMA1		Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2
RoHS: Compliant		0
  • 1:$2.7900
  • 10:$2.3700
  • 100:$1.8900
  • 500:$1.6600
  • 1000:$1.3700
  • 2000:$1.2800
  • 5000:$1.2300
Bild Teil # Beschreibung
IPB042N10N3 G

Mfr.#: IPB042N10N3 G

OMO.#: OMO-IPB042N10N3-G

 MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
IPB042N10N3GE818XT

Mfr.#: IPB042N10N3GE818XT

OMO.#: OMO-IPB042N10N3GE818XT

 MOSFET N-Ch 100V 100A D2PAK-2
IPB042N10N3GATMA1-CUT TAPE

Mfr.#: IPB042N10N3GATMA1-CUT TAPE

OMO.#: OMO-IPB042N10N3GATMA1-CUT-TAPE-1190

 Neu und Original
IPB042N10N3

Mfr.#: IPB042N10N3

OMO.#: OMO-IPB042N10N3-1190

 Neu und Original
IPB042N10N3GATMA1

Mfr.#: IPB042N10N3GATMA1

OMO.#: OMO-IPB042N10N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 100A TO263-3
IPB042N10N3GATMA1 , 2SD1

Mfr.#: IPB042N10N3GATMA1 , 2SD1

OMO.#: OMO-IPB042N10N3GATMA1-2SD1-1190

 Neu und Original
IPB042N10N3GATMA1INFINEO

Mfr.#: IPB042N10N3GATMA1INFINEO

OMO.#: OMO-IPB042N10N3GATMA1INFINEO-1190

 Neu und Original
IPB042N10N3GE8187ATMA1

Mfr.#: IPB042N10N3GE8187ATMA1

OMO.#: OMO-IPB042N10N3GE8187ATMA1-INFINEON-TECHNOLOGIES

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Mfr.#: IPB042N10N3GS

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IPB042N10N3GE818XT

Mfr.#: IPB042N10N3GE818XT

OMO.#: OMO-IPB042N10N3GE818XT-317

 RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IPB042N10N3GE818XT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,79 $
2,79 $
10
2,37 $
23,70 $
100
1,89 $
189,00 $
500
1,66 $
830,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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