OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IPB042N10N3GATMA1

IPB042N10N3GATMA1
Mfr. #:
IPB042N10N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB042N10N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB042N10N3GATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
4.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
88 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
214 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
73 S
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
59 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
48 ns
Typische Einschaltverzögerungszeit:
27 ns
Teil # Aliase:
G IPB042N10N3 IPB42N1N3GXT SP000446880
Gewichtseinheit:
0.139332 oz
Tags
IPB042N10N3GA, IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 100 V 4.2 mOhm 88 nC OptiMOS™ Power Mosfet - D2PAK
***nell
MOSFET, N CH, 100V, 100A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
*** Source Electronics
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 100V 110A D2PAK
***ure Electronics
SUM110N10 Series 100 V 110 A 3.75 W SMT N-Channel Mosfet - TO-263 (D2PAK)
***roFlash
Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0095Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ow.cn
Trans MOSFET N-CH 80V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, N-CH, 80V, 100A, 175DEG C, 214W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 80V, 100A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ure Electronics
Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***nell
MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***et
Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) TO-263
***el Electronic
Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
***ment14 APAC
MOSFET, N CH, 70A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
*** Source Electronics
Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 100V 90A D2PAK
***ure Electronics
Single N-Channel 100 V 0.0082 O 97 nC Surface Mount Power Mosfet -TO-263 (D2PAK)
***ark
Mosfet, N Channel, 100V, 90A, To-263-3; Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 100V, 90A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:300W; Voltage Vgs Max:20V
***el Electronic
VISHAY SUM70040E-GE3 MOSFET Transistor, N Channel, 120 A, 100 V, 0.0032 ohm, 10 V, 4 V
***ical
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK Reel
***ure Electronics
N-Channel 100 V 4 mOhm 375 W SMT ThunderFET Power Mosfet - TO-263
***ment14 APAC
MOSFET, N-CH, 100V, 120A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Source Voltage Vds:100V; On Resistance
***ark
MOSFET, N-CH, 100V, 120A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 100V, 120A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Teil # Mfg. Beschreibung Aktie Preis
IPB042N10N3GATMA1
DISTI # V72:2272_06378065		Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		36
  • 25:$1.9617
  • 10:$1.9682
  • 1:$2.2261
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6222In Stock
  • 500:$1.8588
  • 100:$2.3899
  • 10:$2.9740
  • 1:$3.2900
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6222In Stock
  • 500:$1.8588
  • 100:$2.3899
  • 10:$2.9740
  • 1:$3.2900
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		6000In Stock
  • 1000:$1.4953
IPB042N10N3GATMA1
DISTI # 31049885		Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$1.4933
IPB042N10N3GATMA1
DISTI # 31010737		Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		36
  • 25:$1.9617
  • 10:$1.9682
  • 7:$2.2261
IPB042N10N3GXT
DISTI # IPB042N10N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB042N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 1000
  • 1000:$1.2900
  • 2000:$1.1900
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.1900
IPB042N10N3GATMA1
DISTI # 47Y8047		Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V , RoHS Compliant: Yes705
  • 1:$2.7600
  • 10:$2.3500
  • 25:$2.1900
  • 50:$2.0400
  • 100:$1.8800
  • 250:$1.7700
  • 500:$1.6500
IPB042N10N3GATMA1Infineon Technologies AGSingle N-Channel 100 V 4.2 mOhm 88 nC OptiMOS Power Mosfet - D2PAK
RoHS: Not Compliant		1000Reel
  • 1000:$1.2400
IPB042N10N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		500
  • 1000:$1.0000
  • 500:$1.0500
  • 100:$1.1000
  • 25:$1.1400
  • 1:$1.2300
IPB042N10N3GATMA1
DISTI # 726-IPB042N10N3GATMA		Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant		1607
  • 1:$2.7500
  • 10:$2.3400
  • 100:$1.8700
  • 500:$1.6400
  • 1000:$1.3600
  • 2000:$1.2600
IPB042N10N3 G
DISTI # 726-IPB042N10N3G		Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant		830
  • 1:$2.7600
  • 10:$2.3500
  • 100:$1.8800
  • 500:$1.6500
  • 1000:$1.3600
IPB042N10N3GATMA1
DISTI # 8275237		Infineon Technologies AGMOSFET N-CH 100A 100V OPTIMOS3 TO263, PK370
  • 10:£1.5750
  • 50:£1.3280
  • 250:£1.1860
  • 500:£1.0290
IPB042N10N3GATMA1
DISTI # 8275237P		Infineon Technologies AGMOSFET N-CH 100A 100V OPTIMOS3 TO263, RL980
  • 50:£1.3280
  • 250:£1.1860
  • 500:£1.0290
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,100A,214W,PG-TO263-3778
  • 1:$1.8961
  • 3:$1.6261
  • 10:$1.3077
  • 100:$1.1371
  • 1000:$1.0598
IPB042N10N3GATMA1
DISTI # 2443431		Infineon Technologies AGMOSFET, N CH, 100V, 100A, TO-263-3
RoHS: Compliant		680
  • 1:$4.3700
  • 10:$3.7200
  • 100:$2.9800
  • 500:$2.6200
  • 1000:$2.1600
  • 2000:$2.0100
  • 5000:$1.9400
  • 10000:$1.8700
IPB042N10N3GATMA1
DISTI # XSFP00000153641		Infineon Technologies AGPowerField-EffectTransistor,100AI(D),100V,0.0042ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-263AB
RoHS: Compliant		1346
  • 1000:$1.6500
  • 1346:$1.5500
IPB042N10N3GATMA1
DISTI # 2443431		Infineon Technologies AGMOSFET, N CH, 100V, 100A, TO-263-3
RoHS: Compliant		680
  • 1:£2.3700
  • 10:£1.3400
  • 100:£1.2700
  • 250:£1.2000
  • 500:£1.0400
IPB042N10N3GATMA1
DISTI # C1S322000212747		Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		36
  • 25:$1.9617
  • 10:$1.9682
Bild Teil # Beschreibung
SN65HVD234QDRQ1

Mfr.#: SN65HVD234QDRQ1

OMO.#: OMO-SN65HVD234QDRQ1

 CAN Interface IC 3.3V Auto CAN Bus Transceiver
MMBT2222LT1G

Mfr.#: MMBT2222LT1G

OMO.#: OMO-MMBT2222LT1G

 Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 30V
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1

 MOSFET MOSFET_(75V,120V(
FDY1002PZ

Mfr.#: FDY1002PZ

OMO.#: OMO-FDY1002PZ

 MOSFET -20V DUAL P-CHAN POWERTRENCH
IRLR3410TRLPBF

Mfr.#: IRLR3410TRLPBF

OMO.#: OMO-IRLR3410TRLPBF

 MOSFET MOSFT 100V 15A 105mOhm 22.7nC LogLv
SN74HC14PWR

Mfr.#: SN74HC14PWR

OMO.#: OMO-SN74HC14PWR

 Inverters Hex Schmitt-Trigger
C0603C302K5GACTU

Mfr.#: C0603C302K5GACTU

OMO.#: OMO-C0603C302K5GACTU

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 3000pF 0603 C0G 10%
IRLR3410TRLPBF

Mfr.#: IRLR3410TRLPBF

OMO.#: OMO-IRLR3410TRLPBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 17A DPAK
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1-INFINEON-TECHNOLOGIES

 MOSFET_(75V,120V(
SN65HVD234QDRQ1

Mfr.#: SN65HVD234QDRQ1

OMO.#: OMO-SN65HVD234QDRQ1-TEXAS-INSTRUMENTS

 IC CAN TRANSCEIVER 3.3V 8-SOIC
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von IPB042N10N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,62 $
2,62 $
10
2,22 $
22,20 $
100
1,78 $
178,00 $
500
1,55 $
775,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top