IPB048N15N5LFATMA1

Mfr. #:: IPB048N15N5LFATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-CH 150V 120A TO263-3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB048N15N5LFATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: IPB048N15N5LFATMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Tags: IPB048N1, IPB048, IPB04, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB048N15N5LFATMA1 Beschreibung

***ical: Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R

***i-Key: MOSFET N-CH 150V 120A TO263-3

***et Europe: DIFFERENTIATED MOSFETS

***ark: Mosfet, N-Ch, 150V, 120A, 313W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.0039Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 150V, 120A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CAN N, 150V, 120A, 313W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:150V; Resistenza di Attivazione Rds(on):0.0039ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.1V; Dissipazione di Potenza Pd:313W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management

IPB048N15N5LFATMA1 Mehr Informationen

Light Electric Vehicles (LEV): Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB048N15N5LFATMA1 DISTI # V72:2272_18205007	Infineon Technologies AG	DIFFERENTIATED MOSFETS	873	75000:$3.5970 30000:$3.6260 15000:$3.6560 6000:$3.6850 3000:$3.7140 1000:$3.7430 500:$3.7720 250:$3.8010 100:$4.2230 50:$4.6929 25:$5.2140 10:$5.7940 1:$6.9420
IPB048N15N5LFATMA1 DISTI # IPB048N15N5LFATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 150V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$4.6452
IPB048N15N5LFATMA1 DISTI # IPB048N15N5LFATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 150V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$5.4934 100:$6.5566 10:$7.9740 1:$8.8600
IPB048N15N5LFATMA1 DISTI # IPB048N15N5LFATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$5.4934 100:$6.5566 10:$7.9740 1:$8.8600
IPB048N15N5LFATMA1 DISTI # 32379016	Infineon Technologies AG	DIFFERENTIATED MOSFETS	873	6000:$3.9614 3000:$3.9926 1000:$4.0237 500:$4.0549 250:$4.0861 100:$4.5397 50:$5.0449 25:$5.6051 10:$6.2286 2:$7.4627
IPB048N15N5LFATMA1 DISTI # IPB048N15N5LFATMA1	Infineon Technologies AG	DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB048N15N5LFATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$4.4900 2000:$4.2900 4000:$4.0900 6000:$3.9900 10000:$3.8900
IPB048N15N5LFATMA1 DISTI # SP001503860	Infineon Technologies AG	DIFFERENTIATED MOSFETS (Alt: SP001503860) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€4.1900 2000:€3.9900 4000:€3.8900 6000:€3.5900 10000:€3.3900
IPB048N15N5LFATMA1 DISTI # 93AC7100	Infineon Technologies AG	MOSFET, N-CH, 150V, 120A, 313W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.1V,Power RoHS Compliant: Yes	910	500:$3.8700 250:$4.2500 100:$4.4500 50:$4.7900 25:$5.1300 10:$5.3800 1:$5.9500
IPB048N15N5LFATMA1 DISTI # 726-IPB048N15N5LF	Infineon Technologies AG	MOSFET RoHS: Compliant	363	1:$7.4400 10:$6.7200 25:$6.4100 100:$5.5600 250:$5.3100 500:$4.8400 1000:$4.2200
IPB048N15N5LFATMA1 DISTI # 2986458	Infineon Technologies AG	MOSFET, N-CH, 150V, 120A, 313W, TO-263 RoHS: Compliant	898	100:$6.3100 50:$7.0455 25:$8.1801 10:$8.3265 5:$8.9853 1:$9.9552
IPB048N15N5LFATMA1 DISTI # 2986458	Infineon Technologies AG	MOSFET, N-CH, 150V, 120A, 313W, TO-263 RoHS: Compliant	898	100:£4.4700 50:£4.8200 10:£5.1700 5:£5.9600 1:£6.4900

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPB048N15N5ATMA1 OMO.#: OMO-IPB048N15N5ATMA1	MOSFET
	Mfr.#: IPB048N15N5LFATMA1 OMO.#: OMO-IPB048N15N5LFATMA1	MOSFET
	Mfr.#: IPB048N15N5LFATMA1 OMO.#: OMO-IPB048N15N5LFATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 120A TO263-3
	Mfr.#: IPB048N15N5ATMA1-CUT TAPE OMO.#: OMO-IPB048N15N5ATMA1-CUT-TAPE-1190	Neu und Original
	Mfr.#: IPB048N15N5ATMA1 OMO.#: OMO-IPB048N15N5ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 120A TO263-3

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5000
Menge eingeben:

Der aktuelle Preis von IPB048N15N5LFATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~5,40 $~~; ~~5,40 $~~

10: ~~5,13 $~~; ~~51,26 $~~

100: ~~4,86 $~~; ~~485,60 $~~

500: ~~4,59 $~~; ~~2 293,10 $~~

1000: ~~4,32 $~~; ~~4 316,40 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPB048N15N5LFATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes