IPD30N06S223ATMA2

IPD30N06S223ATMA2
Mfr. #:
IPD30N06S223ATMA2
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 55V 30A TO252-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD30N06S223ATMA2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPD30N06S2, IPD30N06S, IPD30N06, IPD30N0, IPD30N, IPD30, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 2500, N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK Infineon IPD30N06S223ATMA1
***et
Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) TO-252
***et Europe
Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 55V 30A TO252-3
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Teil # Mfg. Beschreibung Aktie Preis
IPD30N06S223ATMA2
DISTI # IPD30N06S223ATMA2-ND
Infineon Technologies AGMOSFET N-CH 55V 30A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.4977
IPD30N06S223ATMA2
DISTI # IPD30N06S223ATMA2
Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD30N06S223ATMA2)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.4299
  • 15000:$0.4379
  • 10000:$0.4529
  • 5000:$0.4699
  • 2500:$0.4869
IPD30N06S223ATMA2
DISTI # IPD30N06S223ATMA2
Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Bulk (Alt: IPD30N06S223ATMA2)
Min Qty: 1000
Container: Bulk
Americas - 0
  • 10000:$0.3169
  • 5000:$0.3229
  • 3000:$0.3339
  • 2000:$0.3469
  • 1000:$0.3599
IPD30N06S223ATMA2
DISTI # SP001061722
Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R (Alt: SP001061722)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.4499
  • 15000:€0.4799
  • 10000:€0.5279
  • 5000:€0.5899
  • 2500:€0.7569
IPD30N06S223ATMA2
DISTI # 726-IPD30N06S223ATMA
Infineon Technologies AGMOSFET N-CHANNEL_55/60V2483
  • 1:$0.8800
  • 10:$0.7470
  • 100:$0.5730
  • 500:$0.5070
  • 1000:$0.4000
  • 2500:$0.3550
  • 10000:$0.3420
IPD30N06S223ATMA2Infineon Technologies AGPower Field-Effect Transistor, 30A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant
5000
  • 1000:$0.3300
  • 500:$0.3500
  • 100:$0.3600
  • 25:$0.3800
  • 1:$0.4100
Bild Teil # Beschreibung
IPD30N06S2L13ATMA4

Mfr.#: IPD30N06S2L13ATMA4

OMO.#: OMO-IPD30N06S2L13ATMA4

MOSFET N-CHANNEL_55/60V
IPD30N06S223ATMA2

Mfr.#: IPD30N06S223ATMA2

OMO.#: OMO-IPD30N06S223ATMA2

MOSFET N-CHANNEL_55/60V
IPD30N06S2L23ATMA3

Mfr.#: IPD30N06S2L23ATMA3

OMO.#: OMO-IPD30N06S2L23ATMA3-INFINEON-TECHNOLOGIES

MOSFET N-CH 55V 30A TO252-3
IPD30N06S215ATMA1

Mfr.#: IPD30N06S215ATMA1

OMO.#: OMO-IPD30N06S215ATMA1-1190

MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
IPD30N06S2L23ATMA2

Mfr.#: IPD30N06S2L23ATMA2

OMO.#: OMO-IPD30N06S2L23ATMA2-1190

MOSFET
IPD30N06S2L-13 2N06L13

Mfr.#: IPD30N06S2L-13 2N06L13

OMO.#: OMO-IPD30N06S2L-13-2N06L13-1190

Neu und Original
IPD30N06S2L13

Mfr.#: IPD30N06S2L13

OMO.#: OMO-IPD30N06S2L13-1190

MOSFET, N CH, 55V, 30A, TO-252-3
IPD30N06S2L13ATMA4

Mfr.#: IPD30N06S2L13ATMA4

OMO.#: OMO-IPD30N06S2L13ATMA4-INFINEON-TECHNOLOGIES

MOSFET N-CH 55V 30A TO252-3
IPD30N06S3L-20

Mfr.#: IPD30N06S3L-20

OMO.#: OMO-IPD30N06S3L-20-1190

- Bulk (Alt: IPD30N06S3L-20)
IPD30N06S2L-23

Mfr.#: IPD30N06S2L-23

OMO.#: OMO-IPD30N06S2L-23-126

IGBT Transistors MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von IPD30N06S223ATMA2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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