IPD

IPD025N06N vs IPD031N03L G vs IPD025N06NATMA1

 
PartNumberIPD025N06NIPD031N03L GIPD025N06NATMA1
DescriptionMOSFET N-Ch 60V 90A DPAK-2MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3MOSFET N-CH 60V 26A TO252-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V30 V-
Id Continuous Drain Current90 A90 A-
Rds On Drain Source Resistance2.1 mOhms2.6 mOhms-
Vgs th Gate Source Threshold Voltage2.1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge83 nC33 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation167 W94 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesOptiMOS 5OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min80 S50 S-
Fall Time12 ns5 ns-
Product TypeMOSFETMOSFET-
Rise Time20 ns6 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time34 ns34 ns-
Typical Turn On Delay Time16 ns9 ns-
Part # AliasesIPD025N06NATMA1 IPD25N6NXT SP000988276IPD031N03LGATMA1 IPD31N3LGXT SP000680554-
Unit Weight0.139332 oz0.139332 oz-
  • Beginnen mit
  • IPD 1152
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPD025N06N MOSFET N-Ch 60V 90A DPAK-2
IPD036N04L G MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3
IPD036N04LGBTMA1 MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3
IPD031N03LGATMA1 MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3
IPD031N03L G MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3
IPD038N06N3 G MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3
IPD034N06N3 G MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3
IPD031N06L3GATMA1 MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3
IPD031N03LGBTMA1 MOSFET N-Ch 30V 90A DPAK-2
IPD033N06NATMA1 MOSFET N-CH 60V 90A TO252-3
IPD034N06N3GATMA1 MOSFET N-CH 60V 100A TO252-3
IPD031N03M G MOSFET N-CH 30V 90A TO252-3
IPD025N06NATMA1 MOSFET N-CH 60V 26A TO252-3
IPD031N03LGATMA1 MOSFET N-CH 30V 90A TO252-3
IPD031N06L3GATMA1 MOSFET N-CH 60V 100A TO252-3
IPD035N06L3GATMA1 MOSFET N-CH 60V 90A TO252-3
IPD036N04LGBTMA1 MOSFET N-CH 40V 90A TO252-3
IPD038N04NGBTMA1 MOSFET N-CH 40V 90A TO252-3
IPD031N03LGBTMA1 MOSFET N-Ch 30V 90A DPAK-2
IPD034N06N3GATMA1-CUT TAPE Neu und Original
IPD036N04LGBTMA1-CUT TAPE Neu und Original
IPD024N06N Neu und Original
IPD025N06N MOSFET N-Ch 60V 90A DPAK-2
IPD02N60S5 Neu und Original
IPD031N03L Neu und Original
IPD031N03L G Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252
IPD031N03LG 30V,90A,N-channel power MOSFET,logic level
IPD031N03LGINDKR-ND Neu und Original
IPD031N03LGXT Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD031N03LGATMA1)
IPD031N06L Neu und Original
IPD031N06L 031N06L Neu und Original
IPD031N06L3 Neu und Original
IPD031N06L3 G Trans MOSFET N-CH 60V 100A 3-Pin TO-252 T/R (Alt: IPD031N06L3 G)
IPD031N06L3G MOSFET N-CH 100A 60V OPTIMOS3 TO252, RL
IPD033N06N Transistor MOSFET N-CH 60V 90A 3-Pin TO-252 T/R (Alt: IPD033N06N)
IPD034N06N3 G MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3
IPD034N06N3G Trans MOSFET N-CH 60V 100A 3-Pin TO-252 T/R (Alt: IPD034N06N3 G)
IPD034N06N3G 034N06N Neu und Original
IPD035N06L3 G MOSFET, N CH, 60V, 90A, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:90A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.0027ohm, Rds(on) Test Voltage Vgs:10V, Thres
IPD035N06L3G Neu und Original
IPD036 Neu und Original
IPD036N04L Neu und Original
IPD036N04L G Trans MOSFET N-CH 40V 90A 3-Pin TO-252 T/R (Alt: IPD036N04L G)
IPD036N04LG 40V,90A,N Channel Power MOSFET
IPD036N04LG , 2SD1963-S Neu und Original
IPD036N04LG 036N04L Neu und Original
IPD036N04LG(036N04L) Neu und Original
IPD038N04NG Neu und Original
IPD038N06N3 G Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R (Alt: IPD038N06N3 G)
IPD038N04N G IGBT Transistors MOSFET N-Ch 40V 90A DPAK-2
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