 | |  | |
| PartNumber | IPD135N08N3GATMA1 | IPD13N03LA G | IPD135N08N3GBTMA1 |
| Description | MOSFET MV POWER MOS | MOSFET N-Ch 25V 30A DPAK-2 | MOSFET N-CH 80V 45A TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | 25 V | - |
| Configuration | Single | Single | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | OptiMOS 3 | - | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | G IPD135N08N3 SP001127822 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Id Continuous Drain Current | - | 30 A | - |
| Rds On Drain Source Resistance | - | 21.9 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 46 W | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 36 S / 18 S | - |
| Fall Time | - | 2.6 ns | - |
| Moisture Sensitive | - | Yes | - |
| Rise Time | - | 4.6 ns | - |
| Typical Turn Off Delay Time | - | 15 ns | - |
| Typical Turn On Delay Time | - | 5.4 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD15N06S2L64ATMA2 | MOSFET N-CHANNEL_55/60V | |
| IPD14N06S280ATMA2 | MOSFET N-CHANNEL_55/60V | ||
| IPD135N08N3GATMA1 | MOSFET MV POWER MOS | ||
| IPD16CNE8N G | MOSFET N-CH 85V 53A TO252-3 | ||
| IPD135N08N3GATMA1 | MOSFET N-CH 80V 45A | ||
| IPD135N08N3GBTMA1 | MOSFET N-CH 80V 45A TO252-3 | ||
| IPD13N03LA G | MOSFET N-CH 25V 30A DPAK | ||
| IPD144N06NGBTMA1 | MOSFET N-CH 60V 50A TO-252 | ||
| IPD14N06S280ATMA1 | MOSFET N-CH 55V 17A TO252-3 | ||
| IPD14N06S280ATMA2 | MOSFET N-CH 55V 17A TO252-3 | ||
| IPD15N06S2L64ATMA1 | MOSFET N-CH 55V 19A TO252-3 | ||
| IPD15N06S2L64ATMA2 | N-CHANNEL_55/60V | ||
| IPD160N04LGBTMA1 | MOSFET N-CH 40V 30A TO252-3 | ||
| IPD16CN10N G | MOSFET N-CH 100V 53A TO252-3 | ||
Infineon Technologies |
IPD14N06S280ATMA1 | MOSFET N-CHANNEL_55/60V | |
| IPD16CN10N G | MOSFET N-Ch 100V 53A DPAK-2 | ||
| IPD13N03LA G | MOSFET N-Ch 25V 30A DPAK-2 | ||
| IPD15N06S2L64ATMA2-CUT TAPE | Neu und Original | ||
| IPD135N08N | Neu und Original | ||
| IPD135N08N3 G | MOSFET N-Ch 80V 45A DPAK-2 OptiMOS 3 | ||
| IPD135N08N3G | Trans MOSFET N-CH 80V 45A 3-Pin TO-252 T/R (Alt: IPD135N08N3 G) | ||
| IPD135N08N3GBTMA1 , 2SD2 | Neu und Original | ||
| IPD13N03LA | 30 A, 25 V, 0.0128 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | ||
| IPD13N03LA G | Neu und Original | ||
| IPD13N03LA P | Neu und Original | ||
| IPD13N03LAG | Neu und Original | ||
| IPD13N03LAG(13N03LA) | Neu und Original | ||
| IPD13N03LAGXT | Neu und Original | ||
| IPD13N03LAGXT/BKN | Neu und Original | ||
| IPD13N03LAP | Neu und Original | ||
| IPD13N06 | Neu und Original | ||
| IPD13NO3LA | Neu und Original | ||
| IPD14-12-5T-2 | Neu und Original | ||
| IPD144N06N G | MOSFET N-Ch 60V 50A DPAK-2 | ||
| IPD144N06NG | Neu und Original | ||
| IPD14N03L | 30 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | ||
| IPD14N03LA | Neu und Original | ||
| IPD14N03LAG | Neu und Original | ||
| IPD14N06S2-80 | Trans MOSFET N-CH 55V 17A 3-Pin TO-252 T/R (Alt: IPD14N06S2-80) | ||
| IPD15N03 | Neu und Original | ||
| IPD15N03L | Neu und Original | ||
| IPD15N062SL-64 | Neu und Original | ||
| IPD15N06S2L-64 | MOSFET N-Ch 55V 19A DPAK-2 OptiMOS | ||
| IPD15N06S2L-64GRN | Neu und Original | ||
| IPD15N06S2L64 | Neu und Original | ||
| IPD160N04L | Neu und Original | ||
| IPD160N04L G | MOSFET, N CHANNEL, 40V, 30A, TO-252-3, Transistor Polarity:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0133ohm, Rds(on) Test Voltage Vgs:10V, | ||
| IPD160N04LG | - Bulk (Alt: IPD160N04LG) | ||
| IPD16CN10NG | Neu und Original | ||
| IPD16CNE8NG | Neu und Original |