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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPD160N04LGBTMA1 DISTI # IPD160N04LGBTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 40V 30A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPD160N04LG DISTI # IPD160N04LG | Infineon Technologies AG | - Bulk (Alt: IPD160N04LG) RoHS: Not Compliant Min Qty: 1786 Container: Bulk | Americas - 0 |
|
| IPD160N04L G DISTI # 60R2702 | Infineon Technologies AG | MOSFET, N CHANNEL, 40V, 30A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0133ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes | 0 | |
| IPD160N04L G DISTI # 726-IPD160N04LG | Infineon Technologies AG | MOSFET N-Ch 40V 30A DPAK-2 RoHS: Compliant | 0 | |
| IPD160N04LG | Infineon Technologies AG | Power Field-Effect Transistor, 30A I(D), 40V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 300 |
|
| IPD160N04L G DISTI # 1775584 | Infineon Technologies AG | MOSFET, N CH, 30A, 40V, PG-TO252-3 RoHS: Compliant | 0 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IPD16CN10N G OMO.#: OMO-IPD16CN10N-G |
MOSFET N-Ch 100V 53A DPAK-2 |
|
Mfr.#: IPD16CNE8N G |
MOSFET N-CH 85V 53A TO252-3 |
|
Mfr.#: IPD160N04L OMO.#: OMO-IPD160N04L-1190 |
Neu und Original |
|
|
Mfr.#: IPD160N04L G OMO.#: OMO-IPD160N04L-G-1190 |
MOSFET, N CHANNEL, 40V, 30A, TO-252-3, Transistor Polarity:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0133ohm, Rds(on) Test Voltage Vgs:10V, |
|
|
Mfr.#: IPD160N04LG OMO.#: OMO-IPD160N04LG-1190 |
- Bulk (Alt: IPD160N04LG) |
|
|
Mfr.#: IPD160N04LGBTMA1 |
MOSFET N-CH 40V 30A TO252-3 |
|
|
Mfr.#: IPD16CN10N G |
MOSFET N-CH 100V 53A TO252-3 |
|
|
Mfr.#: IPD16CN10NG OMO.#: OMO-IPD16CN10NG-1190 |
Neu und Original |
|
|
Mfr.#: IPD16CNE8NG OMO.#: OMO-IPD16CNE8NG-1190 |
Neu und Original |
