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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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IPD15N06S2L64ATMA2 DISTI # V72:2272_06391057 | Infineon Technologies AG | Trans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R | 72 |
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IPD15N06S2L64ATMA2 DISTI # V36:1790_06391057 | Infineon Technologies AG | Trans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R | 0 |
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IPD15N06S2L64ATMA2 DISTI # IPD15N06S2L64ATMA2CT-ND | Infineon Technologies AG | N-CHANNEL_55/60V RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 3245In Stock |
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IPD15N06S2L64ATMA2 DISTI # IPD15N06S2L64ATMA2DKR-ND | Infineon Technologies AG | N-CHANNEL_55/60V RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 3245In Stock |
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IPD15N06S2L64ATMA2 DISTI # IPD15N06S2L64ATMA2TR-ND | Infineon Technologies AG | N-CHANNEL_55/60V RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
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IPD15N06S2L64ATMA2 DISTI # 33919527 | Infineon Technologies AG | Trans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R | 2500 |
|
IPD15N06S2L64ATMA2 DISTI # 26195738 | Infineon Technologies AG | Trans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R | 72 |
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IPD15N06S2L64ATMA2 DISTI # IPD15N06S2L64ATMA2 | Infineon Technologies AG | N-KANAL POWER MOS - Bulk (Alt: IPD15N06S2L64ATMA2) RoHS: Compliant Min Qty: 1471 Container: Bulk | Americas - 0 |
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IPD15N06S2L64ATMA2 DISTI # IPD15N06S2L64ATMA2 | Infineon Technologies AG | N-KANAL POWER MOS - Tape and Reel (Alt: IPD15N06S2L64ATMA2) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
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IPD15N06S2L64ATMA2 DISTI # SP001063644 | Infineon Technologies AG | N-KANAL POWER MOS (Alt: SP001063644) RoHS: Compliant Min Qty: 2500 | Europe - 0 |
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IPD15N06S2L64ATMA2 DISTI # 12AC9707 | Infineon Technologies AG | MOSFET, AEC-Q101, N-CH, 55V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes | 15 |
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IPD15N06S2L64ATMA2. DISTI # 27AC6730 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power Dissipation Pd:47W,No. of Pins:3Pins RoHS Compliant: Yes | 0 |
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IPD15N06S2L64ATMA2 DISTI # 726-IPD15N06S2L64AT | Infineon Technologies AG | MOSFET N-CHANNEL_55/60V RoHS: Compliant | 7129 |
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IPD15N06S2L64ATMA2 | Infineon Technologies AG | N-Channel 55 V 64 mOhm 13 nC OptiMOS Enhancement Mode Power-Transistor-TO-252 RoHS: Not Compliant | 2500Reel |
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IPD15N06S2L64ATMA2 | Infineon Technologies AG | Power Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 39828 |
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IPD15N06S2L64ATMA2 DISTI # 2709988 | Infineon Technologies AG | MOSFET, AEC-Q101, N-CH, 55V, TO-252 | 2515 |
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IPD15N06S2L64ATMA2 DISTI # XSFP00000116981 | Infineon Technologies AG | N-Channel 55 V 64 mOhm 13 nC OptiMOSEnhancementMode Power-Transistor-TO-252 RoHS: Compliant | 5000 in Stock0 on Order |
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IPD15N06S2L64ATMA2 DISTI # 2709988 | Infineon Technologies AG | MOSFET, AEC-Q101, N-CH, 55V, TO-252 RoHS: Compliant | 2510 |
|
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: IPD15N06S2L64ATMA2 OMO.#: OMO-IPD15N06S2L64ATMA2 |
MOSFET N-CHANNEL_55/60V | |
Mfr.#: IPD15N06S2L64ATMA2-CUT TAPE |
Neu und Original | |
Mfr.#: IPD15N06S2L-64 OMO.#: OMO-IPD15N06S2L-64-1190 |
MOSFET N-Ch 55V 19A DPAK-2 OptiMOS | |
Mfr.#: IPD15N06S2L-64GRN OMO.#: OMO-IPD15N06S2L-64GRN-1190 |
Neu und Original | |
Mfr.#: IPD15N06S2L64 OMO.#: OMO-IPD15N06S2L64-1190 |
Neu und Original | |
Mfr.#: IPD15N06S2L64ATMA1 |
MOSFET N-CH 55V 19A TO252-3 | |
Mfr.#: IPD15N06S2L64ATMA2 |
N-CHANNEL_55/60V |