 | | | |
| PartNumber | IPD050N03LGATMA1 | IPD050N03L G | IPD04N03LB G |
| Description | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | MOSFET N-Ch 30V 50A DPAK-2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 50 A | 50 A | 50 A |
| Rds On Drain Source Resistance | 4.2 mOhms | 4.2 mOhms | 5.8 Ohms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 31 nC | 31 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 68 W | 68 W | 115 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 38 S | 38 S | 102 S / 51 S |
| Fall Time | 3.8 ns | 3.8 ns | 6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 13 ns | 13 ns | 10 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 25 ns | 43 ns |
| Typical Turn On Delay Time | 6.7 ns | 6.7 ns | 14 ns |
| Part # Aliases | G IPD050N03L IPD5N3LGXT SP000680630 | IPD050N03LGATMA1 IPD5N3LGXT SP000680630 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Moisture Sensitive | - | - | Yes |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD050N10N5ATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| IPD053N08N3GATMA1 | MOSFET MV POWER MOS | ||
| IPD050N03LGATMA1 | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | ||
| IPD050N03L G | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | ||
| IPD053N06N | MOSFET N-Ch 60V 45A DPAK-2 | ||
| IPD060N03LGATMA1 | MOSFET N-Ch 30V 50A DPAK-2 | ||
| IPD053N06NATMA1 | MOSFET N-Ch 60V 45A DPAK-2 | ||
| IPD060N03L G | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | ||
| IPD050N03LGATMA1 | MOSFET N-CH 30V 50A TO252-3 | ||
| IPD060N03LGATMA1 | MOSFET N-CH 30V 50A TO252-3 | ||
| IPD050N03LGBTMA1 | MOSFET N-CH 30V 50A TO252-3 | ||
| IPD050N10N5ATMA1 | MOSFET N-CH 100V 80A TO252-3 | ||
| IPD060N03LGBTMA1 | MOSFET N-CH 30V 50A TO252-3 | ||
| IPD053N08N3GBTMA1 | MOSFET N-CH 80V 90A TO252-3 | ||
| IPD04N03LB G | MOSFET N-CH 30V 50A TO-252 | ||
| IPD053N06N | Trans MOSFET N-CH 60V 45A | ||
| IPD053N06N3GBTMA1 | MOSFET N-CH 60V 90A TO252-3 | ||
| IPD053N06NATMA1 | MOSFET N-CH 60V 18A TO252-3 | ||
| IPD053N08N3GATMA1 | MOSFET N-CH 80V 90A TO252-3 | ||
| IPD05N03LA G | MOSFET N-CH 25V 50A DPAK | ||
| IPD05N03LB G | MOSFET N-CH 30V 90A DPAK | ||
| IPD060N03L G | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | ||
| IPD050N03L G | IGBT Transistors MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | ||
Infineon Technologies |
IPD04N03LB G | MOSFET N-Ch 30V 50A DPAK-2 | |
| IPD060N03LGBTMA1 | MOSFET LV POWER MOS | ||
| IPD053N08N3GBTMA1 | MOSFET N-Ch 80V 90A DPAK-2 OptiMOS 3 | ||
| IPD050N03LG | Neu und Original | ||
| IPD05N03 | Neu und Original | ||
| IPD05N03LA | Neu und Original | ||
| IPD05N03LAG | MOSFET N-Ch 25V 50A DPAK-2 | ||
| IPD068N10N3 | Neu und Original | ||
| IPD053N06NATMA1-CUT TAPE | Neu und Original | ||
| IPD050N03L GXT | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD050N03LGBTMA1) | ||
| IPD050N03L | Neu und Original | ||
| IPD050N06S | Neu und Original | ||
| IPD053N03N3G 053N03N | Neu und Original | ||
| IPD053N06N3G | Neu und Original | ||
| IPD053N08N3 G | Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) TO-252 | ||
| IPD053N08N3G | Neu und Original | ||
| IPD053N08N3GXT | Neu und Original | ||
| IPD053N08NG 053N08 | Neu und Original | ||
| IPD05N03LBG | Neu und Original | ||
| IPD05N03LG | Neu und Original | ||
| IPD060N03L | Neu und Original | ||
| IPD060N03LG(060N03L) | Neu und Original | ||
| IPD060N03LG,060N03L | Neu und Original | ||
| IPD068N10N3 G | MOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3 | ||
| IPD060N03LGINCT | - Bulk (Alt: IPD060N03LGINCT) | ||
| IPD04N03LBG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| IPD060N03LG | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 |