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IPD068N10N3

IPD068N10N3
Mfr. #:
IPD068N10N3
Hersteller:
Infineon Technologies
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD068N10N3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
OptiMOS 3
Verpackung
Spule
Teil-Aliasnamen
IPD068N10N3GBTMA1 IPD068N10N3GXT SP000469892
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Handelsname
OptiMOS
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
150 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
9 ns
Anstiegszeit
37 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
90 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
6.8 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
37 ns
Typische-Einschaltverzögerungszeit
19 ns
Kanal-Modus
Erweiterung
Tags
IPD068N, IPD068, IPD06, IPD0, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IPD068N10N3GATMA1
DISTI # 33259079		Infineon Technologies AGTrans MOSFET N-CH 100V 90A Automotive 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$0.8978
IPD068N10N3 G
DISTI # 32730921		Infineon Technologies AG02480
  • 7:$3.8000
IPD068N10N3GATMA1
DISTI # IPD068N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 90A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1534In Stock
  • 1000:$1.1471
  • 500:$1.3845
  • 100:$1.6851
  • 10:$2.0960
  • 1:$2.3300
IPD068N10N3GATMA1
DISTI # IPD068N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 90A
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1534In Stock
  • 1000:$1.1471
  • 500:$1.3845
  • 100:$1.6851
  • 10:$2.0960
  • 1:$2.3300
IPD068N10N3GATMA1
DISTI # IPD068N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 90A
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 5000:$0.9985
  • 2500:$1.0369
IPD068N10N3GBTMA1
DISTI # IPD068N10N3GBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD068N10N3GATMA1
    DISTI # V72:2272_13992411    		Infineon Technologies AGTrans MOSFET N-CH 100V 90A Automotive 3-Pin(2+Tab) DPAK T/R0
      IPD068N10N3GATMA1
      DISTI # V36:1790_13992411      		Infineon Technologies AGTrans MOSFET N-CH 100V 90A Automotive 3-Pin(2+Tab) DPAK T/R0
      • 2500000:$0.8521
      • 1250000:$0.8535
      • 250000:$0.9219
      • 25000:$1.0210
      • 2500:$1.0370
      IPD068N10N3G
      DISTI # IPD068N10N3 G      		Infineon Technologies AGTrans MOSFET N-CH 100V 90A 3-Pin(2+Tab) TO-252 (Alt: IPD068N10N3 G)
      RoHS: Compliant
      Min Qty: 2500      		Asia - 7500
        IPD068N10N3G
        DISTI # IPD068N10N3G        		Infineon Technologies AGTrans MOSFET N-CH 100V 90A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD068N10N3G)
        RoHS: Not Compliant
        Min Qty: 374
        Container: Bulk        		Americas - 0
        • 3740:$0.9269
        • 1870:$0.9439
        • 1122:$0.9769
        • 748:$1.0129
        • 374:$1.0509
        IPD068N10N3GATMA1
        DISTI # IPD068N10N3GATMA1        		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPD068N10N3GATMA1)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 0
        • 25000:$0.9289
        • 15000:$0.9459
        • 10000:$0.9789
        • 5000:$1.0149
        • 2500:$1.0539
        IPD068N10N3GATMA1
        DISTI # SP001127816        		Infineon Technologies AGMV POWER MOS (Alt: SP001127816)
        RoHS: Compliant
        Min Qty: 2500        		Europe - 0
        • 25000:€0.8899
        • 15000:€0.9259
        • 10000:€0.9559
        • 5000:€1.0299
        • 2500:€1.3259
        IPD068N10N3GATMA1
        DISTI # 50Y2022        		Infineon Technologies AGMOSFET Transistor, N Channel, 90 A, 100 V, 0.0057 ohm, 10 V, 2.7 V RoHS Compliant: Yes2342
        • 1000:$0.9170
        • 500:$1.1000
        • 250:$1.1800
        • 100:$1.2600
        • 50:$1.3700
        • 25:$1.4700
        • 10:$1.5800
        • 1:$1.9600
        IPD068N10N3GATMA1
        DISTI # 726-IPD068N10N3GATMA        		Infineon Technologies AGMOSFET MV POWER MOS
        RoHS: Compliant        		9302
        • 1:$2.1500
        • 10:$1.8200
        • 100:$1.4600
        • 500:$1.2800
        • 1000:$1.0600
        • 2500:$0.9880
        • 5000:$0.9510
        IPD068N10N3GBTMA1
        DISTI # 726-IPD068N10N3GBTMA        		Infineon Technologies AGMOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3
        RoHS: Compliant        		0
          IPD068N10N3 G
          DISTI # 726-IPD068N10N3G          		Infineon Technologies AGMOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3
          RoHS: Compliant          		0
            IPD068N10N3GInfineon Technologies AGPower Field-Effect Transistor, 90A I(D), 100V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
            RoHS: Compliant            		1
            • 1000:$0.9600
            • 500:$1.0100
            • 100:$1.0500
            • 25:$1.1000
            • 1:$1.1800
            IPD068N10N3GATMA1
            DISTI # 1702284            		Infineon Technologies AGMOSFET N-CH 100V 90A OPTIMOS3 DPAK, RL of 25008
            • 1:£1,758.9500
            IPD068N10N3 GInfineon Technologies AG 2040
            • 793:$2.2950
            • 354:$2.5245
            • 1:$4.5900
            IPD068N10N3 G
            DISTI # TMOS1193            		Infineon Technologies AGN-CH 100V90A6,8mOhm TO252-3
            RoHS: Compliant            		Stock DE - 5000Stock HK - 0Stock US - 0
            • 2500:$1.3500
            IPD068N10N3GATMA1
            DISTI # 2480817            		Infineon Technologies AGMOSFET, N-CH, 100V, 90A, TO-252-31929
            • 500:£0.9890
            • 250:£1.0600
            • 100:£1.1300
            • 10:£1.4200
            • 1:£1.8800
            IPD068N10N3GInfineon Technologies AG100V,6.8m,90A,N-Channel Power MOSFET2000
            • 1:$1.5700
            • 100:$1.3100
            • 500:$1.1500
            • 1000:$1.1200
            IPD068N10N3 GInfineon Technologies AGRoHS(ship within 1day)50
            • 1:$3.0200
            • 10:$2.2600
            • 50:$1.9900
            • 100:$1.7000
            • 500:$1.5800
            • 1000:$1.5300
            Bild Teil # Beschreibung
            IPD068N10N3GATMA1

            Mfr.#: IPD068N10N3GATMA1

            OMO.#: OMO-IPD068N10N3GATMA1

            		 MOSFET MV POWER MOS
            IPD060N03LGATMA1

            Mfr.#: IPD060N03LGATMA1

            OMO.#: OMO-IPD060N03LGATMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 30V 50A TO252-3
            IPD060N03LGINCT

            Mfr.#: IPD060N03LGINCT

            OMO.#: OMO-IPD060N03LGINCT-1190

            		 - Bulk (Alt: IPD060N03LGINCT)
            IPD060N03LG(060N03L)

            Mfr.#: IPD060N03LG(060N03L)

            OMO.#: OMO-IPD060N03LG-060N03L--1190

            		 Neu und Original
            IPD068P03L3GBTMA1

            Mfr.#: IPD068P03L3GBTMA1

            OMO.#: OMO-IPD068P03L3GBTMA1-INFINEON-TECHNOLOGIES

            		 MOSFET P-CH 30V 70A TO252-3
            IPD06N03LA

            Mfr.#: IPD06N03LA

            OMO.#: OMO-IPD06N03LA-1190

            		 MOSFET Transistor, N-Channel, TO-252AA
            IPD06N03LA G

            Mfr.#: IPD06N03LA G

            OMO.#: OMO-IPD06N03LA-G-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 25V 50A DPAK
            IPD06N03LAG

            Mfr.#: IPD06N03LAG

            OMO.#: OMO-IPD06N03LAG-1190

            		 Power Field-Effect Transistor, 50A I(D), 25V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
            IPD06N03LAG , MAX6476UT1

            Mfr.#: IPD06N03LAG , MAX6476UT1

            OMO.#: OMO-IPD06N03LAG-MAX6476UT1-1190

            		 Neu und Original
            IPD06N03LZ

            Mfr.#: IPD06N03LZ

            OMO.#: OMO-IPD06N03LZ-1190

            		 Neu und Original
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            1000
            Menge eingeben:
            Der aktuelle Preis von IPD068N10N3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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