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IPD053N08N3GATMA1

IPD053N08N3GATMA1
Mfr. #:
IPD053N08N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD053N08N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD053N08N3GATMA1 DatasheetIPD053N08N3GATMA1 Datasheet (P4-P6)IPD053N08N3GATMA1 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
90 A
Rds On - Drain-Source-Widerstand:
5.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
52 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
150 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
56 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
66 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
38 ns
Typische Einschaltverzögerungszeit:
18 ns
Teil # Aliase:
G IPD053N08N3 SP001127818
Gewichtseinheit:
0.139332 oz
Tags
IPD053N08N3, IPD053N08, IPD053, IPD05, IPD0, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 80 V 5.3 mOhm 52 nC OptiMOS™ Power Mosfet - TO-252-3
***ment14 APAC
MOSFET, N CH, 90A, 80V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
Teil # Mfg. Beschreibung Aktie Preis
IPD053N08N3GATMA1
DISTI # V72:2272_06383627		Infineon Technologies AGTrans MOSFET N-CH 80V 90A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
    IPD053N08N3GATMA1
    DISTI # V36:1790_06383627    		Infineon Technologies AGTrans MOSFET N-CH 80V 90A Automotive 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		0
    • 2500000:$0.8292
    • 1250000:$0.8305
    • 250000:$0.8973
    • 25000:$0.9938
    • 2500:$1.0090
    IPD053N08N3GATMA1
    DISTI # IPD053N08N3GATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 80V 90A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		21907In Stock
    • 1000:$1.1162
    • 500:$1.3472
    • 100:$1.6397
    • 10:$2.0400
    • 1:$2.2700
    IPD053N08N3GATMA1
    DISTI # IPD053N08N3GATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 80V 90A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		21907In Stock
    • 1000:$1.1162
    • 500:$1.3472
    • 100:$1.6397
    • 10:$2.0400
    • 1:$2.2700
    IPD053N08N3GATMA1
    DISTI # IPD053N08N3GATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 80V 90A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		20000In Stock
    • 5000:$0.9716
    • 2500:$1.0090
    IPD053N08N3GATMA1
    DISTI # IPD053N08N3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 80V 90A 3-Pin TO-252 - Tape and Reel (Alt: IPD053N08N3GATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.9039
    • 15000:$0.9199
    • 10000:$0.9519
    • 5000:$0.9879
    • 2500:$1.0249
    IPD053N08N3GATMA1
    DISTI # SP001127818    		Infineon Technologies AGTrans MOSFET N-CH 80V 90A 3-Pin TO-252 (Alt: SP001127818)
    RoHS: Compliant
    Min Qty: 2500    		Europe - 0
    • 25000:€0.7739
    • 15000:€0.8289
    • 10000:€0.8929
    • 5000:€0.9679
    • 2500:€1.1609
    IPD053N08N3GATMA1
    DISTI # 60R2692    		Infineon Technologies AGMOSFET, N CHANNEL, 80V, 90A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes208
    • 1000:$0.8440
    • 500:$1.0100
    • 100:$1.1600
    • 10:$1.4500
    • 1:$1.8000
    IPD053N08N3GATMA1
    DISTI # 726-IPD053N08N3GA    		Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant    		9268
    • 1:$2.0900
    • 10:$1.7800
    • 100:$1.4200
    • 500:$1.2400
    • 1000:$1.0300
    • 2500:$0.9610
    • 5000:$0.9260
    IPD053N08N3GATMA1
    DISTI # 1702283    		Infineon Technologies AGMOSFET N-CH 80V 90A OPTIMOS3 DPAK, RL of 25002
    • 2:£1,709.0900
    • 1:£1,752.9100
    IPD053N08N3GATMA1
    DISTI # 1775574    		Infineon Technologies AGMOSFET, N CH, 90A, 80V, PG-TO252-35662
    • 500:£0.9630
    • 250:£1.0300
    • 100:£1.1000
    • 10:£1.4000
    • 1:£1.8500
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    Verfügbarkeit
    Aktie:
    11
    Auf Bestellung:
    1994
    Menge eingeben:
    Der aktuelle Preis von IPD053N08N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,09 $
    2,09 $
    10
    1,78 $
    17,80 $
    100
    1,42 $
    142,00 $
    500
    1,24 $
    620,00 $
    1000
    1,03 $
    1 030,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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