IPD

IPD03N03LB G vs IPD03N03LA G vs IPD038N06N3GATMA1

 
PartNumberIPD03N03LB GIPD03N03LA GIPD038N06N3GATMA1
DescriptionMOSFET N-Ch 30V 90A DPAK-2MOSFET N-Ch 25V 90A DPAK-2MOSFET MV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V25 V-
Id Continuous Drain Current90 A90 A-
Rds On Drain Source Resistance4.9 mOhms5.1 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation115 W115 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReelReel
Height2.3 mm2.3 mm2.3 mm
Length6.5 mm6.5 mm6.5 mm
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min120 S / 60 S113 S / 56 S-
Fall Time6.2 ns6.6 ns-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFETMOSFET
Rise Time9 ns10 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time41 ns42 ns-
Typical Turn On Delay Time13 ns13 ns-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Tradename--OptiMOS
Part # Aliases--G IPD038N06N3 IPD38N6N3GXT SP000397994
  • Beginnen mit
  • IPD 1152
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPD048N06L3 G MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3
IPD042P03L3GATMA1 MOSFET SMALL SIGNAL+P-CH
IPD040N03L G MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3
IPD042P03L3GBTMA1 MOSFET P-Ch -30V 70A DPAK-2 OptiMOS P3
IPD042P03L3 G MOSFET P-Ch -30V 70A DPAK-2 OptiMOS P3
IPD040N03LGBTMA1 MOSFET N-Ch 30V 90A DPAK-2
IPD042P03L3GATMA1 MOSFET P-CH 30V 70A TO252-3
IPD042P03L3GBTMA1 MOSFET P-CH 30V 70A TO252-3
IPD046N08N5ATMA1 MOSFET N-CH 80V 90A TO252-3
IPD048N06L3GBTMA1 MOSFET N-CH 60V 90A TO252-3
IPD03N03LA G MOSFET N-CH 25V 90A TO-252
IPD03N03LB G MOSFET N-CH 30V 90A TO-252
IPD038N06N3GATMA1 MOSFET N-CH 60V 90A TO252-3
IPD040N03LGATMA1 MOSFET N-CH 30V 90A TO252-3
IPD04N03LA G MOSFET N-CH 25V 50A DPAK
IPD040N03LGBTMA1 MOSFET N-Ch 30V 90A DPAK-2
Infineon Technologies
Infineon Technologies
IPD03N03LB G MOSFET N-Ch 30V 90A DPAK-2
IPD03N03LA G MOSFET N-Ch 25V 90A DPAK-2
IPD046N08N5ATMA1 MOSFET DIFFERENTIATED MOSFETS
IPD038N06N3GATMA1 MOSFET MV POWER MOS
IPD042P03L3G Trans MOSFET P-CH 30V 70A 3-Pin TO-252 T/R (Alt: IPD042P03L3 G)
IPD042P03L3GATMA1-CUT TAPE Neu und Original
IPD042P03L3GXT Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD042P03L3GBTMA1)
IPD038N06N3G Neu und Original
IPD03N03LA Neu und Original
IPD03N03LAG Neu und Original
IPD03N03LAG PB-FREE Neu und Original
IPD03N03LB Neu und Original
IPD03N03LBG Neu und Original
IPD040N03 Neu und Original
IPD040N03L Neu und Original
IPD040N03L G Trans MOSFET N-CH 30V 90A 3-Pin TO-252 T/R (Alt: SP000680628)
IPD040N03L G(SP000680628 Neu und Original
IPD040N03LG Power Field-Effect Transistor, 89A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD040N03LG 040N03L Neu und Original
IPD040N03LG , 2SD1974 Neu und Original
IPD040N03LG(04N03L) Neu und Original
IPD040N03LGS Neu und Original
IPD042P03L3G 042P03L Neu und Original
IPD042P03L3G(042P03L) Neu und Original
IPD042P03L3GATMA1 , 2SD1 Neu und Original
IPD042P03L3GBTMA1 , 2SD1 Neu und Original
IPD042P03L3GS Neu und Original
IPD048N06L3 G Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R
IPD048N06L3G 60V,4.8m��,90A,N-Channel Power MOSFET
IPD04N03L Neu und Original
IPD04N03LA Neu und Original
IPD04N03LA 04N03LA Neu und Original
IPD04N03LAG Neu und Original
IPD042P03L3 G IGBT Transistors MOSFET P-Ch -30V 70A DPAK-2 OptiMOS P3
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