IPD042P03L3GATMA1

IPD042P03L3GATMA1
Mfr. #:
IPD042P03L3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET SMALL SIGNAL+P-CH
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD042P03L3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
70 A
Rds On - Drain-Source-Widerstand:
6.8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
4.5 V
Qg - Gate-Ladung:
131 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
150 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 P-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
65 S
Abfallzeit:
22 ns
Produktart:
MOSFET
Anstiegszeit:
167 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
89 ns
Typische Einschaltverzögerungszeit:
21 ns
Teil # Aliase:
G IPD042P03L3 SP001127836
Gewichtseinheit:
0.139332 oz
Tags
IPD042P03L3GA, IPD042, IPD04, IPD0, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**x
    E**x
    IN

    Not working

    2019-06-20
    E***Z
    E***Z
    UA

    Up Запоріжжя йшла місяць. The stream is regulated for povny obert. Wimagay is the liver of the precise regulation.

    2019-05-02
    M***o
    M***o
    BY

    All gut is happy

    2019-01-29
    V***a
    V***a
    RU

    I did not receive the goods. i opened a dispute. The seller requires that i wait for more. but already the delivery lasts 75 days, where else!

    2019-03-25
***ark
Mosfet Transistor, P Channel, -70 A, -30 V, 0.0035 Ohm, -10 V, -1.5 V
***ure Electronics
Single P-Channel 30V 4.2 mOhm 131 nC OptiMOS™ Power Mosfet - TO-252-3
***ical
Trans MOSFET P-CH 30V 70A Automotive 3-Pin(2+Tab) TO-252 T/R
***p One Stop Japan
Trans MOSFET P-CH 30V 70A Automotive 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) TO-252
***et Europe
Trans MOSFET P-CH 30V 70A 3-Pin TO-252 T/R
***o-Tech
MOSFET P-Ch 30V 70A OptiMOS3 TO252
***an P&S
-30V,-70A,P Channel Power MOSFET
***i-Key
MOSFET P-CH 30V 70A TO252-3
***ronik
P-CH -30V -70A 4.2mOhm TO252-3
***ment14 APAC
Prices include import duty and tax. MOSFET, P CH, -30V, -70A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-70A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:150W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***nell
MOSFET, CANALE P, -30V, -70A, TO-252-3; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-70A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.0035ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-1.5V; Dissipazione di Potenza Pd:150W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
IPD042P03L3GATMA1
DISTI # V36:1790_06383944
Infineon Technologies AGOptiMOS P3 Power-Transistor
RoHS: Compliant
0
  • 2500000:$0.5752
  • 1250000:$0.5755
  • 250000:$0.6019
  • 25000:$0.6491
  • 2500:$0.6570
IPD042P03L3GATMA1
DISTI # V72:2272_06383944
Infineon Technologies AGOptiMOS P3 Power-Transistor
RoHS: Compliant
0
    IPD042P03L3GATMA1
    DISTI # IPD042P03L3GATMA1CT-ND
    Infineon Technologies AGMOSFET P-CH 30V 70A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    301In Stock
    • 1000:$0.7744
    • 500:$0.9346
    • 100:$1.1375
    • 10:$1.4150
    • 1:$1.5800
    IPD042P03L3GATMA1
    DISTI # IPD042P03L3GATMA1DKR-ND
    Infineon Technologies AGMOSFET P-CH 30V 70A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    301In Stock
    • 1000:$0.7744
    • 500:$0.9346
    • 100:$1.1375
    • 10:$1.4150
    • 1:$1.5800
    IPD042P03L3GATMA1
    DISTI # IPD042P03L3GATMA1TR-ND
    Infineon Technologies AGMOSFET P-CH 30V 70A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 12500:$0.6637
    • 5000:$0.6896
    • 2500:$0.7259
    IPD042P03L3GATMA1
    DISTI # IPD042P03L3GATMA1
    Infineon Technologies AGTrans MOSFET P-CH 30V 70A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD042P03L3GATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.5009
    • 15000:$0.5109
    • 10000:$0.5279
    • 5000:$0.5479
    • 2500:$0.5689
    IPD042P03L3GATMA1
    DISTI # SP001127836
    Infineon Technologies AGTrans MOSFET P-CH 30V 70A 3-Pin TO-252 T/R (Alt: SP001127836)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 7500:€0.5850
    • 5000:€0.5990
    • 2500:€0.6120
    IPD042P03L3GATMA1
    DISTI # 43AC3266
    Infineon Technologies AGMOSFET, P-CH, -30V, -70A, TO-252,Transistor Polarity:P Channel,Continuous Drain Current Id:-70A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes3770
    • 1000:$0.7480
    • 500:$0.9480
    • 250:$1.0100
    • 100:$1.0700
    • 50:$1.1800
    • 25:$1.2900
    • 10:$1.3900
    • 1:$1.6400
    IPD042P03L3GATMA1
    DISTI # 97Y9248
    Infineon Technologies AGMOSFET, P-CH, -30V, -70A, TO-252,Transistor Polarity:P Channel,Continuous Drain Current Id:-70A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes0
    • 10000:$0.6390
    • 5000:$0.6470
    • 2500:$0.6550
    • 1:$0.6640
    IPD042P03L3GATMA1
    DISTI # 726-IPD042P03L3GATMA
    Infineon Technologies AGMOSFET SMALL SIGNAL+P-CH
    RoHS: Compliant
    6045
    • 1:$1.6200
    • 10:$1.3800
    • 100:$1.0600
    • 500:$0.9390
    • 1000:$0.7410
    • 2500:$0.6570
    • 10000:$0.6330
    IPD042P03L3GATMA1
    DISTI # 8259051
    Infineon Technologies AGMOSFET P-CH 70A 30V OPTIMOS P3 TO252, PK680
    • 200:£0.7320
    • 100:£0.7910
    • 10:£0.8620
    IPD042P03L3GATMA1
    DISTI # 8259051P
    Infineon Technologies AGMOSFET P-CH 70A 30V OPTIMOS P3 TO252, RL1440
    • 200:£0.7320
    • 100:£0.7910
    IPD042P03L3GATMA1
    DISTI # 2803390
    Infineon Technologies AGMOSFET, P-CH, -30V, -70A, TO-252
    RoHS: Compliant
    1795
    • 100:$1.2100
    • 50:$1.3900
    • 25:$1.6400
    • 10:$2.0200
    • 1:$2.3100
    IPD042P03L3GATMA1
    DISTI # 2536881
    Infineon Technologies AGMOSFET, P-CH, -30V, -70A, TO-252
    RoHS: Compliant
    0
    • 2500:$1.2500
    IPD042P03L3GATMA1
    DISTI # 2803390
    Infineon Technologies AGMOSFET, P-CH, -30V, -70A, TO-2521565
    • 1000:£0.5370
    • 500:£0.6800
    • 100:£0.7690
    • 50:£1.0100
    • 5:£1.1000
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von IPD042P03L3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
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    Stückpreis
    ext. Preis
    1
    1,62 $
    1,62 $
    10
    1,38 $
    13,80 $
    100
    1,06 $
    106,00 $
    500
    0,94 $
    469,50 $
    1000
    0,74 $
    741,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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