PartNumber | IPD042P03L3GATMA1 | IPD042P03L3GBTMA1 | IPD042P03L3 G |
Description | MOSFET SMALL SIGNAL+P-CH | MOSFET P-Ch -30V 70A DPAK-2 OptiMOS P3 | MOSFET P-Ch -30V 70A DPAK-2 OptiMOS P3 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
Id Continuous Drain Current | 70 A | 70 A | 70 A |
Rds On Drain Source Resistance | 6.8 mOhms | 3.5 mOhms | 3.5 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
Vgs Gate Source Voltage | 4.5 V | 20 V | 20 V |
Qg Gate Charge | 131 nC | 175 nC | 175 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 150 W | 150 W | 150 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 65 S | 65 S | 65 S |
Fall Time | 22 ns | 22 ns | 22 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 167 ns | 167 ns | 167 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 89 ns | 89 ns | 89 ns |
Typical Turn On Delay Time | 21 ns | 21 ns | 21 ns |
Part # Aliases | G IPD042P03L3 SP001127836 | G IPD042P03L3 IPD42P3L3GXT SP000473922 | IPD042P03L3GBTMA1 IPD42P3L3GXT SP000473922 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Series | - | XPD042P03 | OptiMOS P3 |
Tradename | - | - | OptiMOS |