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IPD038N06N3GATMA1

IPD038N06N3GATMA1
Mfr. #:
IPD038N06N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD038N06N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Breite:
6.22 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Unterkategorie:
MOSFETs
Teil # Aliase:
G IPD038N06N3 IPD38N6N3GXT SP000397994
Gewichtseinheit:
0.139332 oz
Tags
IPD038N06, IPD038, IPD03, IPD0, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 3.8 mOhm 98 nC OptiMOS™ Power Mosfet - DPAK
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 60V, PG-TO252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:188W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:188W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Teil # Mfg. Beschreibung Aktie Preis
IPD038N06N3GATMA1
DISTI # V72:2272_06383370		Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		1462
  • 1000:$0.7329
  • 500:$0.8923
  • 250:$1.0949
  • 100:$1.1062
  • 25:$1.3859
  • 10:$1.3999
  • 1:$1.7261
IPD038N06N3GATMA1
DISTI # V36:1790_06383370		Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500:$0.5812
IPD038N06N3GATMA1
DISTI # IPD038N06N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 90A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1436In Stock
  • 1000:$0.7824
  • 500:$0.9442
  • 100:$1.1493
  • 10:$1.4300
  • 1:$1.5900
IPD038N06N3GATMA1
DISTI # IPD038N06N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 90A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1436In Stock
  • 1000:$0.7824
  • 500:$0.9442
  • 100:$1.1493
  • 10:$1.4300
  • 1:$1.5900
IPD038N06N3GATMA1
DISTI # IPD038N06N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 90A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 12500:$0.6705
  • 5000:$0.6967
  • 2500:$0.7334
IPD038N06N3GATMA1
DISTI # 33713069		Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$0.8937
IPD038N06N3GATMA1
DISTI # 31610434		Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		1462
  • 13:$1.7261
IPD038N06N3GATMA1
DISTI # IPD038N06N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD038N06N3GATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.5069
  • 15000:$0.5159
  • 10000:$0.5339
  • 5000:$0.5539
  • 2500:$0.5749
IPD038N06N3 G
DISTI # 726-IPD038N06N3G		Infineon Technologies AGMOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3
RoHS: Compliant		1176
  • 1:$1.6300
  • 10:$1.3900
  • 100:$1.0700
  • 500:$0.9480
  • 1000:$0.7490
  • 2500:$0.6640
  • 10000:$0.6390
IPD038N06N3GATMA1Infineon Technologies AGSingle N-Channel 60 V 3.8 mOhm 98 nC OptiMOS Power Mosfet - DPAK
RoHS: Not Compliant		2500Reel
  • 2500:$0.5450
IPD038N06N3GATMA1
DISTI # XSFP00000147549		Infineon Technologies AGPower Field-Effect Transistor,20AI(D),600V,0.19ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB
RoHS: Compliant		5000 in Stock0 on Order
  • 5000:$0.7267
  • 2500:$0.7786
Bild Teil # Beschreibung
IPD038N06N3 G

Mfr.#: IPD038N06N3 G

OMO.#: OMO-IPD038N06N3-G

 MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3
IPD038N06N3GATMA1

Mfr.#: IPD038N06N3GATMA1

OMO.#: OMO-IPD038N06N3GATMA1

 MOSFET MV POWER MOS
IPD038N04NG

Mfr.#: IPD038N04NG

OMO.#: OMO-IPD038N04NG-1190

 Neu und Original
IPD038N04NGBTMA1

Mfr.#: IPD038N04NGBTMA1

OMO.#: OMO-IPD038N04NGBTMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 40V 90A TO252-3
IPD038N06N3 G

Mfr.#: IPD038N06N3 G

OMO.#: OMO-IPD038N06N3-G-1190

 Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R (Alt: IPD038N06N3 G)
IPD038N06N3G

Mfr.#: IPD038N06N3G

OMO.#: OMO-IPD038N06N3G-1190

 Neu und Original
IPD038N06N3GATMA1

Mfr.#: IPD038N06N3GATMA1

OMO.#: OMO-IPD038N06N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 90A TO252-3
IPD038N04N G

Mfr.#: IPD038N04N G

OMO.#: OMO-IPD038N04N-G-126

 IGBT Transistors MOSFET N-Ch 40V 90A DPAK-2
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von IPD038N06N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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