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FQP3N80C

FQP3N80C
Mfr. #:
FQP3N80C
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 800V N-Ch Q-FET advance C-Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQP3N80C Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
3 A
Rds On - Drain-Source-Widerstand:
4.8 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
107 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
QFET
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FQP3N80C
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
3 S
Abfallzeit:
32 ns
Produktart:
MOSFET
Anstiegszeit:
43.5 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
22.5 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
FQP3N80C_NL
Gewichtseinheit:
0.063493 oz
Tags
FQP3N80C, FQP3N8, FQP3N, FQP3, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220
***et Europe
Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220AB Rail
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:107W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:4.8ohm; Package / Case:TO-220; Power Dissipation Pd:107W; Power Dissipation Pd:107W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQP3N80C
DISTI # V36:1790_06359293		ON SemiconductorN-CH/800V/3A/C-FET1489
  • 1000:$0.5629
  • 500:$0.7109
  • 100:$0.8032
  • 10:$1.0388
  • 1:$1.3349
FQP3N80C
DISTI # FQP3N80CFS-ND		ON SemiconductorMOSFET N-CH 800V 3A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		715In Stock
  • 5000:$0.5252
  • 3000:$0.5529
  • 1000:$0.5924
  • 100:$0.9083
  • 25:$1.1056
  • 10:$1.1650
  • 1:$1.3000
FQP3N80C
DISTI # 25977586		ON SemiconductorN-CH/800V/3A/C-FET1489
  • 16:$1.3349
FQP3N80C
DISTI # FQP3N80C		ON SemiconductorTrans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP3N80C)
RoHS: Compliant
Min Qty: 1		Europe - 2250
  • 1000:€0.4059
  • 500:€0.4369
  • 100:€0.4729
  • 50:€0.5159
  • 25:€0.5679
  • 10:€0.6309
  • 1:€0.7099
FQP3N80C
DISTI # FQP3N80C		ON SemiconductorTrans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP3N80C)
RoHS: Compliant
Min Qty: 455
Container: Bulk		Americas - 0
  • 4550:$0.6789
  • 2275:$0.6959
  • 1365:$0.7049
  • 910:$0.7139
  • 455:$0.7179
FQP3N80C
DISTI # FQP3N80C		ON SemiconductorTrans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP3N80C)
RoHS: Compliant
Min Qty: 1000		Asia - 0
  • 50000:$0.5361
  • 25000:$0.5450
  • 10000:$0.5638
  • 5000:$0.5839
  • 3000:$0.6056
  • 2000:$0.6289
  • 1000:$0.6540
FQP3N80C
DISTI # FQP3N80C		ON SemiconductorTrans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP3N80C)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.6409
  • 5000:$0.6579
  • 3000:$0.6659
  • 2000:$0.6749
  • 1000:$0.6789
FQP3N80C
DISTI # 97K0176		ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:800V,On Resistance Rds(on):4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:107W,MSL:- RoHS Compliant: Yes1904
  • 1000:$0.6620
  • 500:$0.8130
  • 100:$0.9080
  • 10:$1.1600
  • 1:$1.3400
FQP3N80C
DISTI # 512-FQP3N80C		ON SemiconductorMOSFET 800V N-Ch Q-FET advance C-Series
RoHS: Compliant		1534
  • 1:$1.2300
  • 10:$1.0500
  • 100:$0.8090
  • 500:$0.7150
  • 1000:$0.5650
FQP3N80C_Q
DISTI # 512-FQP3N80C_Q		ON SemiconductorMOSFET 800V N-Ch Q-FET advance C-Series
RoHS: Not compliant		0
    FQP3N80CFairchild Semiconductor CorporationPower Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		80827
    • 1000:$0.6200
    • 500:$0.6500
    • 100:$0.6800
    • 25:$0.7100
    • 1:$0.7600
    FQP3N80C
    DISTI # 6715109    		ON SemiconductorMOSFET N-CHANNEL 800V 3A TO220AB, PK1405
    • 500:£0.5680
    • 250:£0.7360
    • 50:£0.8320
    • 25:£0.9300
    • 5:£1.0480
    FQP3N80C
    DISTI # 1095065    		ON SemiconductorMOSFET, N, TO-2201919
    • 500:£0.5560
    • 250:£0.5930
    • 100:£0.6290
    • 10:£0.8740
    • 1:£1.0900
    FQP3N80C
    DISTI # 1095065    		ON SemiconductorMOSFET, N, TO-220
    RoHS: Compliant    		2019
    • 1000:$0.8690
    • 500:$1.1100
    • 100:$1.2500
    • 10:$1.6200
    • 1:$1.8900
    Bild Teil # Beschreibung
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    STP5N80K5

    Mfr.#: STP5N80K5

    OMO.#: OMO-STP5N80K5

    		 MOSFET N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package
    DST2060C

    Mfr.#: DST2060C

    OMO.#: OMO-DST2060C

    		 Schottky Diodes & Rectifiers 60V 20A 2x Common Cathode
    PIC24FJ256GA702-I/SS

    Mfr.#: PIC24FJ256GA702-I/SS

    OMO.#: OMO-PIC24FJ256GA702-I-SS

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    STP4LN80K5

    Mfr.#: STP4LN80K5

    OMO.#: OMO-STP4LN80K5

    		 MOSFET N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package
    LMG1020YFFR

    Mfr.#: LMG1020YFFR

    OMO.#: OMO-LMG1020YFFR

    		 Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
    LM2903HYPT

    Mfr.#: LM2903HYPT

    OMO.#: OMO-LM2903HYPT-STMICROELECTRONICS

    		 Analog Comparators CONDITIONING & INTERFACES
    STP4LN80K5

    Mfr.#: STP4LN80K5

    OMO.#: OMO-STP4LN80K5-STMICROELECTRONICS

    		 MOSFET N-CHANNEL 800V 3A TO220
    STP5N80K5

    Mfr.#: STP5N80K5

    OMO.#: OMO-STP5N80K5-STMICROELECTRONICS

    		 N-CHANNEL 800 V, 1.50 OHM TYP.,
    MCP3221A0T-E/OT

    Mfr.#: MCP3221A0T-E/OT

    OMO.#: OMO-MCP3221A0T-E-OT-MICROCHIP-TECHNOLOGY

    		 ADC 12BIT I2C INTERFACE SOT23-5
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von FQP3N80C dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,23 $
    1,23 $
    10
    1,05 $
    10,50 $
    100
    0,81 $
    80,90 $
    500
    0,72 $
    357,50 $
    1000
    0,56 $
    565,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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