FQP3N80C

FQP3N80C vs FQP3N80C SMK0380P vs FQP3N80C,3N80C,

 
PartNumberFQP3N80CFQP3N80C SMK0380PFQP3N80C,3N80C,
DescriptionMOSFET 800V N-Ch Q-FET advance C-Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance4.8 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation107 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFQP3N80C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min3 S--
Fall Time32 ns--
Product TypeMOSFET--
Rise Time43.5 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22.5 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesFQP3N80C_NL--
Unit Weight0.063493 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP3N80C MOSFET 800V N-Ch Q-FET advance C-Series
ON Semiconductor
ON Semiconductor
FQP3N80C MOSFET N-CH 800V 3A TO-220
FQP3N80C SMK0380P Neu und Original
FQP3N80C,3N80C, Neu und Original
FQP3N80C,3N80C,FQPF2N80, Neu und Original
FQP3N80C,FQP3N80 Neu und Original
FQP3N80C-TU Neu und Original
FQP3N80C-- Neu und Original
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