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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSP295E6327 DISTI # BSP295INTR-ND | Infineon Technologies AG | MOSFET N-CH 60V 1.8A SOT223 RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP295E6327 DISTI # BSP295INCT-ND | Infineon Technologies AG | MOSFET N-CH 60V 1.8A SOT223 RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP295E6327T DISTI # BSP295XTINTR-ND | Infineon Technologies AG | MOSFET N-CH 60V 1.8A SOT223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP295E6327T DISTI # BSP295XTINCT-ND | Infineon Technologies AG | MOSFET N-CH 60V 1.8A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP295E6327 | Siemens | Power Field-Effect Transistor, 1.8A I(D), 50V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 1000 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSP296NH6327XTSA1 OMO.#: OMO-BSP296NH6327XTSA1 |
MOSFET N-Ch 100V 1.1A SOT-223-3 |
|
|
Mfr.#: BSP297H6327XTSA1 OMO.#: OMO-BSP297H6327XTSA1 |
MOSFET N-Ch 200V 660mA SOT-223-3 |
|
|
Mfr.#: BSP296N H6433 OMO.#: OMO-BSP296N-H6433 |
MOSFET SMALL SIGNAL N-CH |
|
Mfr.#: BSP296 E6327 , TEA1791AT |
Neu und Original |
|
Mfr.#: BSP296E6327 |
MOSFET N-CH 100V 1.1A SOT223 |
|
|
Mfr.#: BSP296NH6327 OMO.#: OMO-BSP296NH6327-1190 |
MOSFET, N-CH, 100V, 1.2A, SOT-223-4 |
|
|
Mfr.#: BSP297L6327 OMO.#: OMO-BSP297L6327-1190 |
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP298 L6327 OMO.#: OMO-BSP298-L6327-1190 |
MOSFET N-Ch 400V 500mA SOT-223-3 |
|
|
Mfr.#: BSP299L6327XT OMO.#: OMO-BSP299L6327XT-1190 |
Neu und Original |
|
|
Mfr.#: BSP296NH6327XTSA1 |
MOSFET N-CH 100V 1.2A SOT-223 |
