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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| PSMN070-200B,118 DISTI # 1727-4775-1-ND | Nexperia | MOSFET N-CH 200V 35A D2PAK Min Qty: 1 Container: Cut Tape (CT) | 463In Stock |
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| PSMN070-200B,118 DISTI # 1727-4775-6-ND | Nexperia | MOSFET N-CH 200V 35A D2PAK Min Qty: 1 Container: Digi-Reel® | 463In Stock |
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| PSMN070-200B,118 DISTI # 1727-4775-2-ND | Nexperia | MOSFET N-CH 200V 35A D2PAK Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| PSMN070-200B,118 DISTI # PSMN070-200B,118 | Nexperia | Trans MOSFET N-CH 200V 35A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN070-200B,118) RoHS: Compliant Min Qty: 4800 Container: Reel | Americas - 3200 | |
| PSMN070-200B,118 DISTI # PSMN070-200B118 | Nexperia | Trans MOSFET N-CH 200V 35A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: PSMN070-200B118) RoHS: Not Compliant Min Qty: 261 Container: Bulk | Americas - 0 | |
| PSMN070-200B,118 | NXP Semiconductors | Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 200 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: PSMN070-200B OMO.#: OMO-PSMN070-200B-1190 |
Neu und Original |
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Mfr.#: PSMN070-200B/T3 OMO.#: OMO-PSMN070-200B-T3-1190 |
Neu und Original |
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Mfr.#: PSMN070-200B118 OMO.#: OMO-PSMN070-200B118-1190 |
Now Nexperia PSMN070-200B - Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: PSMN070-200B_15 OMO.#: OMO-PSMN070-200B-15-1190 |
Neu und Original |
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Mfr.#: PSMN070-200P OMO.#: OMO-PSMN070-200P-1190 |
- Bulk (Alt: PSMN070-200P) |
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Mfr.#: PSMN070-200P/B OMO.#: OMO-PSMN070-200P-B-1190 |
Neu und Original |
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Mfr.#: PSMN070-200P127 OMO.#: OMO-PSMN070-200P127-1190 |
Now Nexperia PSMN070-200P - Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P |
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Mfr.#: PSMN070-200B,118 |
MOSFET TAPE13 PWR-MOS |
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Mfr.#: PSMN070-200P,127 |
MOSFET RAIL PWR-MOS |