 |  |  | |
| PartNumber | PSMN075-100MSEX | PSMN070-200B,118 | PSMN070-200P,127 |
| Description | MOSFET PSMN075-100MSE/MLFPAK/REEL 7 | MOSFET TAPE13 PWR-MOS | MOSFET RAIL PWR-MOS |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | LFPAK33-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 18 A | - | - |
| Rds On Drain Source Resistance | 71 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 16.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 65 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel MOSFET | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 6.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.8 ns | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12.4 ns | - | - |
| Typical Turn On Delay Time | 5.5 ns | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PSMN075-100MSEX | MOSFET PSMN075-100MSE/MLFPAK/REEL 7 | |
| PSMN075-100MSEX | IGBT Transistors MOSFET PSMN075-100MSE/MLFPAK/REEL7 | ||
| PSMN070-200B,118 | MOSFET TAPE13 PWR-MOS | ||
| PSMN070-200P,127 | MOSFET RAIL PWR-MOS | ||
| PSMN070-200B | Neu und Original | ||
| PSMN070-200B/T3 | Neu und Original | ||
| PSMN070-200B118 | Now Nexperia PSMN070-200B - Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| PSMN070-200B_15 | Neu und Original | ||
| PSMN070-200P | - Bulk (Alt: PSMN070-200P) | ||
| PSMN070-200P/B | Neu und Original | ||
| PSMN070-200P127 | Now Nexperia PSMN070-200P - Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P | ||
| PSMN075 110P | Neu und Original | ||
| PSMN075-100MSEX-CUT TAPE | Neu und Original |