C2M0280120D

C2M0280120D
Mfr. #:
C2M0280120D
Hersteller:
N/A
Beschreibung:
MOSFET SIC MOSFET 1200V RDS ON 280 mOhm
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
C2M0280120D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
C2M0280120D Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Cree, Inc.
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1.2 kV
Id - Kontinuierlicher Drainstrom:
10 A
Rds On - Drain-Source-Widerstand:
280 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.8 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
5.6 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
62.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
Z-FET
Verpackung:
Rohr
Transistortyp:
1 N-Channel
Marke:
Wolfspeed / Cree
Vorwärtstranskonduktanz - Min:
2.8 S
Abfallzeit:
9.9 ns
Produktart:
MOSFET
Anstiegszeit:
7.6 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
10.8 ns
Typische Einschaltverzögerungszeit:
5.2 ns
Gewichtseinheit:
1.340411 oz
Tags
C2M0, C2M
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0280120D
***ark
Mosfet, N-Ch, 1.2Kv, 10A, To-247 Rohs Compliant: Yes
***ical
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247
***ment14 APAC
场效应管, MOSFET, N沟道, 1.2KV, 10A, TO-247;
***i-Key
MOSFET N-CH 1200V 10A TO-247-3
***hardson RFPD
SILICON CARBIDE MOSFETS
***nell
MOSFET, CA-N, 1,2KV, 10A, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.28ohm; Tensione Vgs di Misura Rds(on):20V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:62.5W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Wolfspeed C2M™ SiC Power MOSFETs
Wolfspeed C2M family of Silicon Carbide Power MOSFETs provide engineers a wide range of 1200V and 1700V SiC MOSFETs. Wolfspeed SiC MOSFETs enable engineers to replace silicon transistors (IGBTs) and develop high-voltage circuits with extremely fast switching speeds and ultra-low switching losses. Used in conjunction with Wolfspeed SiC Schottky diodes in an all-SiC system, the C2M SiC MOSFET allows design engineers to achieve levels of energy efficiency, size, and weight reduction that are not possible with available silicon power devices of comparable ratings. The new C2M family of MOSFETs is based on a rugged and reliable Gen2 SiC technology platform, providing the lowest switching losses in their class. The C2M significantly higher switching frequencies, all at lower cost. This revolutionary series also reduces the size of magnetics and filter components and significantly reduces cooling requirements.Learn more
Teil # Mfg. Beschreibung Aktie Preis
C2M0280120D
DISTI # V36:1790_06265415
Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247
RoHS: Compliant
170
  • 25:$4.3900
  • 10:$4.8750
  • 1:$5.9576
C2M0280120D
DISTI # V99:2348_06265415
Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247
RoHS: Compliant
86
  • 10:$4.8830
  • 1:$5.9576
C2M0280120D
DISTI # C2M0280120D-ND
WolfspeedMOSFET N-CH 1200V 10A TO-247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
16158In Stock
  • 100:$5.4131
  • 1:$5.4300
KIT8020-CRD-8FF1217P-1
DISTI # KIT8020-CRD-8FF1217P-1-ND
WolfspeedEVAL KIT PCB 2-MOSFET 2-SIC DRVR
RoHS: Not compliant
Min Qty: 1
Container: Box
144In Stock
  • 1:$248.7500
C2M0280120D
DISTI # 29424048
Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247
RoHS: Compliant
1043
  • 30:$4.8255
C2M0280120D
DISTI # 30990506
Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247
RoHS: Compliant
170
  • 2:$5.9576
C2M0280120D
DISTI # 30729731
Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247
RoHS: Compliant
86
  • 2:$5.9576
C2M0280120D
DISTI # 98Y6013
WolfspeedMOSFET, N-CH, 1.2KV, 10A, TO-247 ROHS COMPLIANT: YES15
  • 500:$5.0200
  • 250:$5.1500
  • 100:$5.2700
  • 50:$5.3300
  • 25:$5.5100
  • 10:$5.8200
  • 1:$6.1900
C2M0280120D
DISTI # 941-C2M0280120D
Cree, Inc.MOSFET SIC MOSFET 1200V RDS ON 280 mOhm
RoHS: Compliant
4933
  • 1:$5.4300
  • 100:$5.2200
  • 500:$4.9700
C2M0280120D
DISTI # 9158820
Cree, Inc.N-CHAN SIC MOSFET 1200V 10A TO247, PK26
  • 120:£4.4700
  • 60:£4.5850
  • 30:£4.7700
  • 10:£4.8950
  • 2:£5.1050
C2M0280120D
DISTI # C2M0280120D
WolfspeedTransistor: N-MOSFET,SiC,unipolar,1.2kV,10A,62.5W,TO247-326
  • 30:$6.0100
  • 10:$6.4500
  • 3:$7.4300
  • 1:$8.4100
C2M0280120D
DISTI # C2M0280120D
WolfspeedSILICON CARBIDE MOSFETS
RoHS: Compliant
2649
  • 1:$5.3200
  • 11:$5.1600
  • 51:$4.9400
C2M0280120D
DISTI # 2630831
WolfspeedMOSFET, N-CH, 1.2KV, 10A, TO-247
RoHS: Compliant
634
  • 1:$9.0600
C2M0280120D
DISTI # 2630831
WolfspeedMOSFET, N-CH, 1.2KV, 10A, TO-247
RoHS: Compliant
726
  • 100:£4.2400
  • 50:£4.2800
  • 10:£4.3100
  • 5:£4.3500
  • 1:£4.8200
Bild Teil # Beschreibung
AD5624RBRMZ-3

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OMO.#: OMO-AD5624RBRMZ-3

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SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120

MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
C3M0280090D

Mfr.#: C3M0280090D

OMO.#: OMO-C3M0280090D

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C2M1000170D

Mfr.#: C2M1000170D

OMO.#: OMO-C2M1000170D

MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
C2M0160120D

Mfr.#: C2M0160120D

OMO.#: OMO-C2M0160120D

MOSFET SIC MOSFET 1200V RDS ON 160 mOhm
SCT2450KEC

Mfr.#: SCT2450KEC

OMO.#: OMO-SCT2450KEC

MOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC
C4D02120E

Mfr.#: C4D02120E

OMO.#: OMO-C4D02120E

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2A
C4D02120A

Mfr.#: C4D02120A

OMO.#: OMO-C4D02120A

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2A
AD5624RBRMZ-3

Mfr.#: AD5624RBRMZ-3

OMO.#: OMO-AD5624RBRMZ-3-ANALOG-DEVICES-INC-ADI

Digital to Analog Converters - DAC IC 12-Bit w/ 5 ppm/oC On-Chip Ref
MGJ2D051505SC

Mfr.#: MGJ2D051505SC

OMO.#: OMO-MGJ2D051505SC-MURATA-POWER-SOLUTIONS

Isolated DC/DC Converters 2W 5Vin 15/-5Vout 80/40mA SIP
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von C2M0280120D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,43 $
5,43 $
100
5,22 $
522,00 $
500
4,97 $
2 485,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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