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SCT10N120

SCT10N120
Mfr. #:
SCT10N120
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SCT10N120 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SCT10N120 Mehr Informationen SCT10N120 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
HiP-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1.2 kV
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
500 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.8 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
22 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 200 C
Pd - Verlustleistung:
150 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiP247â?¢
Verpackung:
Rohr
Serie:
SCT10N120
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
17 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
600
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
14 ns
Typische Einschaltverzögerungszeit:
7 ns
Tags
SCT10, SCT1, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 1200 V 520 mO 22 nC Silicon Carbide power Mosfet - HiP247
***ical
Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
***et
Trans MOSFET N-CH 1200V 12A 3-Pin HiP247 Tube
***i-Key
MOSFET N-CH 1.2KV TO247-3
***ronik
SiC-N 1200V 12A 690mOhm HiP247
***ark
Mosfet, N-Ch, 1.2Kv, 12A, 150W, Hip247; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.5Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 1.2KV, 12A, 150W, HIP247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:150W; Transistor Case Style:HiP247; No. of Pins:3Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, CA-N, 1,2KV, 12A, 150W, HIP247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.5ohm; Tensione Vgs di Misura Rds(on):20V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:150W; Modello Case Transistor:HiP247; No. di Pin:3Pin; Temperatura di Esercizio Max:200°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Silicon Carbide Power MOSFETs
STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.
Teil # Mfg. Beschreibung Aktie Preis
SCT10N120
DISTI # V99:2348_17630036		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
RoHS: Compliant		482
  • 1000:$6.8350
  • 500:$7.4480
  • 250:$7.6380
  • 100:$8.3110
  • 25:$9.4770
  • 10:$9.8920
  • 1:$10.7400
SCT10N120
DISTI # V36:1790_16518943		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
RoHS: Compliant		0
    SCT10N120
    DISTI # 497-16597-5-ND    		STMicroelectronicsMOSFET N-CH 1.2KV TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		243In Stock
    • 600:$7.8257
    • 100:$8.7971
    • 25:$9.9844
    • 10:$10.4160
    • 1:$11.3300
    SCT10N120
    DISTI # 25948587    		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
    RoHS: Compliant    		482
    • 1:$10.7400
    SCT10N120
    DISTI # SCT10N120    		STMicroelectronicsTrans MOSFET N-CH 1200V 12A 3-Pin HiP247 Tube (Alt: SCT10N120)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 94
    • 1000:€6.1900
    • 500:€6.5900
    • 100:€6.8900
    • 50:€7.1900
    • 25:€7.3900
    • 10:€7.7900
    • 1:€8.4900
    SCT10N120
    DISTI # SCT10N120    		STMicroelectronicsTrans MOSFET N-CH 1200V 12A 3-Pin HiP247 Tube - Bulk (Alt: SCT10N120)
    RoHS: Compliant
    Min Qty: 600
    Container: Bulk    		Americas - 0
    • 6000:$6.4900
    • 3000:$6.6900
    • 1800:$6.9900
    • 1200:$7.2900
    • 600:$7.6900
    SCT10N120H
    DISTI # SCT10N120H    		STMicroelectronics- Tape and Reel (Alt: SCT10N120H)
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$5.4900
    • 6000:$5.6900
    • 4000:$5.8900
    • 2000:$6.1900
    • 1000:$6.4900
    SCT10N120
    DISTI # 97Y9494    		STMicroelectronicsPTD WBG & POWER RF0
    • 1:$6.4300
    SCT10N120H
    DISTI # 59AC7246    		STMicroelectronicsPTD WBG & POWER RF0
    • 1:$5.4800
    SCT10N120
    DISTI # 511-SCT10N120    		STMicroelectronicsMOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
    RoHS: Compliant    		328
    • 1:$10.7900
    • 10:$9.9300
    • 25:$9.5100
    • 100:$8.3800
    • 250:$7.9700
    • 500:$7.4600
    • 1000:$6.8400
    SCT10N120H
    DISTI # 511-SCT10N120H    		STMicroelectronicsMOSFET0
    • 1000:$5.9200
    SCT10N120
    DISTI # TMOSP12812    		STMicroelectronicsSiC-N 1200V 12A 690mOhm HiP247
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 600:$7.8800
    SCT10N120
    DISTI # 3129687    		STMicroelectronicsMOSFET, N-CH, 1.2KV, 12A, 150W, HIP247
    RoHS: Compliant    		0
    • 250:$9.1200
    • 100:$10.5800
    • 50:$11.2400
    • 10:$11.8200
    • 5:$13.5200
    • 1:$14.3600
    SCT10N120
    DISTI # 3129687    		STMicroelectronicsMOSFET, N-CH, 1.2KV, 12A, 150W, HIP247600
    • 100:£6.2700
    • 50:£6.7000
    • 10:£7.1200
    • 5:£8.0700
    • 1:£8.6000
    Bild Teil # Beschreibung
    LSIC1MO170E1000

    Mfr.#: LSIC1MO170E1000

    OMO.#: OMO-LSIC1MO170E1000

    		 MOSFET 1700V 1000mOhm SiC MOSFET
    LSIC1MO120E0160

    Mfr.#: LSIC1MO120E0160

    OMO.#: OMO-LSIC1MO120E0160

    		 MOSFET 1200 V 160 mOhm SiC Mosfet
    SCT2750NYTB

    Mfr.#: SCT2750NYTB

    OMO.#: OMO-SCT2750NYTB

    		 MOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide
    SCT2H12NZGC11

    Mfr.#: SCT2H12NZGC11

    OMO.#: OMO-SCT2H12NZGC11

    		 MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC
    C2M0280120D

    Mfr.#: C2M0280120D

    OMO.#: OMO-C2M0280120D

    		 MOSFET SIC MOSFET 1200V RDS ON 280 mOhm
    UJ3C120080K3S

    Mfr.#: UJ3C120080K3S

    OMO.#: OMO-UJ3C120080K3S

    		 MOSFET 1200V/80mOhm SiC CASCODE G3
    SCT2450KEC

    Mfr.#: SCT2450KEC

    OMO.#: OMO-SCT2450KEC

    		 MOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC
    EEE-TP1H751M

    Mfr.#: EEE-TP1H751M

    OMO.#: OMO-EEE-TP1H751M

    		 Aluminum Electrolytic Capacitors - SMD 50VDC 750uF 20% SMD AEC-Q200 High Ripple
    LSIC1MO120E0080

    Mfr.#: LSIC1MO120E0080

    OMO.#: OMO-LSIC1MO120E0080

    		 MOSFET 1200V 80mOhm SiC MOSFET
    SCT3080KLGC11

    Mfr.#: SCT3080KLGC11

    OMO.#: OMO-SCT3080KLGC11

    		 MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS
    Verfügbarkeit
    Aktie:
    328
    Auf Bestellung:
    2311
    Menge eingeben:
    Der aktuelle Preis von SCT10N120 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    10,79 $
    10,79 $
    10
    9,93 $
    99,30 $
    25
    9,51 $
    237,75 $
    100
    8,38 $
    838,00 $
    250
    7,97 $
    1 992,50 $
    500
    7,46 $
    3 730,00 $
    1000
    6,84 $
    6 840,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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