SCT2H12NZGC11

Mfr. #:: SCT2H12NZGC11
Hersteller:: Rohm Semiconductor
Beschreibung:: MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SCT2H12NZGC11 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SCT2H12NZGC11 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: ROHM Halbleiter

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: SiC

Montageart:: Durchgangsloch

Paket / Koffer:: TO-3PFM-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 1700 V

Id - Kontinuierlicher Drainstrom:: 3.7 A

Rds On - Drain-Source-Widerstand:: 1.15 Ohms

Vgs th - Gate-Source-Schwellenspannung:: 1.6 V

Vgs - Gate-Source-Spannung:: - 6 V, 22 V

Qg - Gate-Ladung:: 14 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 35 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Rohr

Produkt:: Leistungs-MOSFETs

Serie:: SCT2x

Transistortyp:: 1 N-Channel

Typ:: N-Kanal SiC-Leistungs-MOSFET

Marke:: ROHM Halbleiter

Vorwärtstranskonduktanz - Min:: 0.4 s

Abfallzeit:: 74 ns

Produktart:: MOSFET

Anstiegszeit:: 21 ns

Werkspackungsmenge:: 30

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 35 ns

Typische Einschaltverzögerungszeit:: 16 ns

Teil # Aliase:: SCT2H12NZ

Gewichtseinheit:: 0.402300 oz

Tags: SCT2H, SCT2, SCT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SCT2H12NZGC11 Beschreibung

***ure Electronics: SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM

***ical: Trans MOSFET N-CH SiC 1.7KV 3.7A 3-Pin(3+Tab) TO-3PFM Tube

***ark: Mosfet, N-Ch, 1.7Kv, To-3Pfm; Mosfet Configuration:single; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:1.7Kv; On Resistance Rds(On):1.15Ohm; No. Of Pins:3Pins; Threshold Voltage Vgs:2.8V Rohs Compliant: Yes

SCT2H12NZGC11 Mehr Informationen

Silicon Carbide (SiC) Power Devices: ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

1700V N-Channel SiC Power MOSFET: ROHM 1700V N-Channel SiC Power MOSFET offers a drain-source breakdown voltage of 1700V and a continuous drain current of 3.7A. The MOSFET features a low on-resistance, fast switching speed, and long creepage distance, making it ideal for auxiliary power supplies and switch mode power supplies. Learn More

N-Channel SiC Power MOSFETs: ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.

Industrial Product Solutions: ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.

Electronic Vehicle (EV) Solutions: ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SCT2H12NZGC11 DISTI # 30614319	ROHM Semiconductor	0	504	4:$7.6625
SCT2H12NZGC11 DISTI # SCT2H12NZGC11-ND	ROHM Semiconductor	MOSFET N-CH 1700V 3.7A RoHS: Compliant Min Qty: 1 Container: Tube	668In Stock	2520:$3.3250 510:$3.8750 120:$4.4500 30:$5.1250 10:$5.3750 1:$5.9500
SCT2H12NZGC11 DISTI # C1S625901603314	ROHM Semiconductor	MOSFETs	504	200:$4.4000 50:$5.3100 10:$5.3600 1:$6.1300
SCT2H12NZGC11 DISTI # SCT2H12NZGC11	ROHM Semiconductor	Trans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube (Alt: SCT2H12NZGC11) Min Qty: 450	Americas - 0	2700:$3.1900 4500:$3.1900 1800:$3.3900 900:$3.6900 450:$3.8900
SCT2H12NZGC11 DISTI # SCT2H12NZGC11	ROHM Semiconductor	Trans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube (Alt: SCT2H12NZGC11) RoHS: Compliant Min Qty: 450 Container: Tube	Asia - 0
SCT2H12NZGC11 DISTI # SCT2H12NZGC11	ROHM Semiconductor	Trans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube (Alt: SCT2H12NZGC11) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€3.3800 500:€3.4500 250:€3.5200 100:€3.5900 10:€3.6700 1:€4.8700
SCT2H12NZGC11 DISTI # SCT2H12NZGC11	ROHM Semiconductor	Trans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube - Rail/Tube (Alt: SCT2H12NZGC11) RoHS: Compliant Min Qty: 30 Container: Tube	Americas - 0
SCT2H12NZGC11 DISTI # 79Y4716	ROHM Semiconductor	Trans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube - Bulk (Alt: 79Y4716) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	500:$3.8800 250:$4.2600 100:$4.4500 50:$4.7900 25:$5.1300 10:$5.3800 1:$5.9500
SCT2H12NZGC11 DISTI # 79Y4716	ROHM Semiconductor	MOSFET, N-CH, 1.7KV, TO-3PFM,Transistor Polarity:N Channel,Continuous Drain Current Id:3.7A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):1.15ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,No. of Pins:3PinsRoHS Compliant: Yes	1	250:$4.2900 100:$4.4900 50:$4.8300 25:$5.1700 10:$5.4200 1:$6.0000
SCT2H12NZGC11 DISTI # 755-SCT2H12NZGC11	ROHM Semiconductor	MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC RoHS: Compliant	166	1:$5.9400 10:$5.3700 25:$5.1200 100:$4.4500 250:$4.2500
SCT2H12NZGC11 DISTI # TMOS1097	ROHM Semiconductor	SiC-N 1700V 1150mOhm 3.7A TO3PF RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	450:$4.2200
SCT2H12NZGC11	ROHM Semiconductor		480	1:¥359.7597 100:¥150.3076 450:¥75.3492
SCT2H12NZGC11 DISTI # 2531101	ROHM Semiconductor	MOSFET, N-CH, 1.7KV, 3.7A, TO-3PFM	323	100:£3.5700 50:£3.8400 10:£4.1100 5:£4.7600 1:£5.2600
SCT2H12NZGC11 DISTI # 2531101	ROHM Semiconductor	MOSFET, N-CH, 1.7KV, 3.7A, TO-3PFM RoHS: Compliant	413	120:$6.7100 30:$7.7300 10:$8.1000 1:$8.9700
SCT2H12NZGC11	ROHM Semiconductor	MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC RoHS: Compliant	Americas - 5040

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	Mfr.#: LSIC1MO170E1000 OMO.#: OMO-LSIC1MO170E1000-LITTELFUSE	1700V/1000mohm SiC MOSFET TO-247-3L
	Mfr.#: RDER73A333K4M1H03A OMO.#: OMO-RDER73A333K4M1H03A-1106	Multilayer Ceramic Capacitors MLCC - Leaded 0.033uF 1Kvolts X7R 10%

Verfügbarkeit

Aktie:: 109
Auf Bestellung:: 2092
Menge eingeben:

Der aktuelle Preis von SCT2H12NZGC11 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~5,94 $~~; ~~5,94 $~~

10: ~~5,37 $~~; ~~53,70 $~~

25: ~~5,12 $~~; ~~128,00 $~~

100: ~~4,45 $~~; ~~445,00 $~~

250: ~~4,25 $~~; ~~1 062,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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SCT2H12NZGC11

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes