UJ3C120080K3S

UJ3C120080K3S
Mfr. #:
UJ3C120080K3S
Hersteller:
UnitedSiC
Beschreibung:
MOSFET 1200V/80mOhm SiC CASCODE G3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
UJ3C120080K3S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
UJ3C120080K3S Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
UnitedSiC
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1.2 kV
Id - Kontinuierlicher Drainstrom:
33 A
Rds On - Drain-Source-Widerstand:
100 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
51 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
254.2 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Rohr
Serie:
UJ3C
Marke:
UnitedSiC
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
14 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
61 ns
Typische Einschaltverzögerungszeit:
22 ns
Tags
UJ3C1, UJ3C, UJ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Cascodes
UnitedSiC SiC Cascodes are the 3rd generation gate drive SiC devices that are a combination of high-performance SiC JFETs and cascode optimized MOSFETs. These SiC Cascodes are the enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The SiC Cascodes offer the best performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). These devices deliver ultra-low gate charge but also the best reverse recovery characteristics of any devices of similar ratings. 
Bild Teil # Beschreibung
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OMO.#: OMO-SCT10N120

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Mfr.#: C3M0120100K

OMO.#: OMO-C3M0120100K

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Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160

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Mfr.#: UJ3C120040K3S

OMO.#: OMO-UJ3C120040K3S

MOSFET 1200V/40mOhm SiC CASCODE G3
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Mfr.#: UF3C120080K4S

OMO.#: OMO-UF3C120080K4S

MOSFET 1200V 80m? SiC Cascode Fast
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Mfr.#: C2M1000170J

OMO.#: OMO-C2M1000170J

MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
LSIC1MO120E0080

Mfr.#: LSIC1MO120E0080

OMO.#: OMO-LSIC1MO120E0080

MOSFET 1200V 80mOhm SiC MOSFET
LSIC1MO120E0160

Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160-LITTELFUSE

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C2M1000170J

Mfr.#: C2M1000170J

OMO.#: OMO-C2M1000170J-WOLFSPEED

MOSFET N-CH 1700V 5.3A TO247
Verfügbarkeit
Aktie:
597
Auf Bestellung:
2580
Menge eingeben:
Der aktuelle Preis von UJ3C120080K3S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
23,10 $
23,10 $
5
22,06 $
110,30 $
10
21,37 $
213,70 $
25
19,64 $
491,00 $
50
19,18 $
959,00 $
100
18,25 $
1 825,00 $
250
16,75 $
4 187,50 $
500
15,94 $
7 970,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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