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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSP315PL6327HTSA1 DISTI # BSP315PL6327HTSA1TR-ND | Infineon Technologies AG | MOSFET P-CH 60V 1.17A SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSP315P H6327 OMO.#: OMO-BSP315P-H6327 |
MOSFET P-Ch -60V -1.17A SOT-223-3 |
|
|
Mfr.#: BSP315PH6327XTSA1 OMO.#: OMO-BSP315PH6327XTSA1 |
MOSFET P-Ch -60V -1.17A SOT-223-3 |
|
Mfr.#: BSP315P OMO.#: OMO-BSP315P-1190 |
P CHANNEL MOSFET, -60V, 1.17A, SOT-223, Transistor Polarity:P Channel, Continuous Drain Current Id:1.17A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):0.8ohm, Rds(on) Test Voltage Vgs:-10 |
|
Mfr.#: BSP315P-E6327 |
MOSFET P-CH 60V 1.17A SOT-223 |
|
|
Mfr.#: BSP315PH6327 OMO.#: OMO-BSP315PH6327-1190 |
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP315PH6327XTSA1 |
MOSFET P-CH 60V 1.17A SOT-223 |
|
|
Mfr.#: BSP315PL6327 OMO.#: OMO-BSP315PL6327-1190 |
POWER FIELD-EFFECT TRANSISTOR, 1.17A I(D), 60V, 0.8OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
|
|
Mfr.#: BSP315PL6327HTSA1 |
MOSFET P-CH 60V 1.17A SOT-223 |
|
|
Mfr.#: BSP315PL6327XT OMO.#: OMO-BSP315PL6327XT-1190 |
Neu und Original |
|
|
Mfr.#: BSP315PH6327XTSA1-CUT TAPE |
Neu und Original |