 |  |  | |
| PartNumber | BSP31,115 | BSP315P H6327 | BSP315P-E6327 |
| Description | Bipolar Transistors - BJT TRANS MED PWR TAPE-7 | MOSFET P-Ch -60V -1.17A SOT-223-3 | MOSFET P-CH 60V 1.17A SOT-223 |
| Manufacturer | Nexperia | Infineon | - |
| Product Category | Bipolar Transistors - BJT | MOSFET | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-3 | PG-SOT-223-4 | - |
| Transistor Polarity | PNP | P-Channel | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 70 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Height | 1.7 mm | 1.6 mm | - |
| Length | 6.7 mm | 6.5 mm | - |
| Packaging | Reel | Reel | - |
| Width | 3.7 mm | 3.5 mm | - |
| Brand | Nexperia | Infineon Technologies | - |
| Pd Power Dissipation | 1300 mW | 1.8 W | - |
| Product Type | BJTs - Bipolar Transistors | MOSFET | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | MOSFETs | - |
| Part # Aliases | BSP31 T/R | BSP315PH6327XTSA1 SP001058830 | - |
| Unit Weight | 0.003951 oz | 0.003951 oz | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Id Continuous Drain Current | - | 1.17 A | - |
| Rds On Drain Source Resistance | - | 800 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 5.2 nC | - |
| Channel Mode | - | Enhancement | - |
| Series | - | BSP315 | - |
| Transistor Type | - | 1 P-Channel | - |
| Forward Transconductance Min | - | 700 mS | - |
| Fall Time | - | 19 ns | - |
| Rise Time | - | 9 ns | - |
| Typical Turn Off Delay Time | - | 32 ns | - |
| Typical Turn On Delay Time | - | 24 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
BSP31,115 | Bipolar Transistors - BJT TRANS MED PWR TAPE-7 | |
| BSP31,115 | TRANS PNP 60V 1A SOT223 | ||
Infineon Technologies |
BSP315P H6327 | MOSFET P-Ch -60V -1.17A SOT-223-3 | |
| BSP315PH6327XTSA1 | MOSFET P-Ch -60V -1.17A SOT-223-3 | ||
| BSP316PH6327XTSA1 | MOSFET P-Ch -100V -680mA SOT-223-3 | ||
| BSP316P H6327 | MOSFET P-Ch -100V -680mA SOT-223-3 | ||
| BSP315P-E6327 | MOSFET P-CH 60V 1.17A SOT-223 | ||
| BSP315PH6327XTSA1 | MOSFET P-CH 60V 1.17A SOT-223 | ||
| BSP315PL6327HTSA1 | MOSFET P-CH 60V 1.17A SOT-223 | ||
| BSP316PH6327XTSA1 | MOSFET P-CH 100V 0.68A SOT223 | ||
| BSP316PL6327HTSA1 | MOSFET P-CH 100V 0.68A SOT-223 | ||
| BSP316PE6327 | MOSFET P-CH 100V 0.68A SOT223 | ||
| BSP315PE6327T | MOSFET P-CH 60V 1.17A SOT-223 | ||
| BSP316PE6327T | MOSFET P-CH 100V 0.68A SOT223 | ||
| BSP31.115 | Transistor: PNP, bipolar, 60V, 1A, 1.3W, SOT223 | ||
| BSP31 | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET | ||
| BSP31115 | Now Nexperia BSP31 - Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin | ||
| BSP315 | Neu und Original | ||
| BSP315 E6327 | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP315 E6327 , TEA1792AT | Neu und Original | ||
| BSP315 E6433 | Neu und Original | ||
| BSP315E-6327 | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET | ||
| BSP315E-6327,1N4148W-7-F | Neu und Original | ||
| BSP315E-6433 | INSTOCK | ||
| BSP315P | P CHANNEL MOSFET, -60V, 1.17A, SOT-223, Transistor Polarity:P Channel, Continuous Drain Current Id:1.17A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):0.8ohm, Rds(on) Test Voltage Vgs:-10 | ||
| BSP315P L6327 | Neu und Original | ||
| BSP315P E6327 | Neu und Original | ||
| BSP315P E6918 | Neu und Original | ||
| BSP315P H6327 | MOSFET P-Ch -60V -1.17A SOT-223-3 | ||
| BSP315PE6327 | Neu und Original | ||
| BSP315PH6327 | Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP315PL6327 | POWER FIELD-EFFECT TRANSISTOR, 1.17A I(D), 60V, 0.8OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BSP315PL6327XT | Neu und Original | ||
| BSP316 | Neu und Original | ||
| BSP316 / BSP316 | Neu und Original | ||
| BSP316 E6327 | Neu und Original | ||
| BSP316 L6327 | Neu und Original | ||
| BSP316E6327 | Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP316P | Neu und Original | ||
| BSP316P E6327 | Neu und Original | ||
| BSP316P H6327 | MOSFET P-Ch -100V -680mA SOT-223-3 | ||
| BSP316P L6327 | MOSFET P-Ch -100V 680mA SOT-223-3 | ||
| BSP316P/BSP316 | Neu und Original | ||
| BSP316PE6327XTINCT | Neu und Original | ||
| BSP316PH6327 | -100V,-0.68A,P-Ch Small-Signal MOSFET | ||
| BSP316PL6327 | Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP316PL6327XT | Neu und Original | ||
| BSP316S | Neu und Original | ||
| BSP315 E6918 | Neu und Original | ||
| BSP315PH6327XTSA1-CUT TAPE | Neu und Original |