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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSP316-E6327 | Infineon Technologies AG | 937 | ||
| BSP316E6327 | Infineon Technologies AG | Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 1780 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: BSP316PH6327XTSA1 OMO.#: OMO-BSP316PH6327XTSA1 |
MOSFET P-Ch -100V -680mA SOT-223-3 |
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Mfr.#: BSP316P H6327 OMO.#: OMO-BSP316P-H6327 |
MOSFET P-Ch -100V -680mA SOT-223-3 |
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Mfr.#: BSP316 / BSP316 OMO.#: OMO-BSP316-BSP316-1190 |
Neu und Original |
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Mfr.#: BSP316 L6327 OMO.#: OMO-BSP316-L6327-1190 |
Neu und Original |
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Mfr.#: BSP316P OMO.#: OMO-BSP316P-1190 |
Neu und Original |
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Mfr.#: BSP316P/BSP316 OMO.#: OMO-BSP316P-BSP316-1190 |
Neu und Original |
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Mfr.#: BSP316PH6327 OMO.#: OMO-BSP316PH6327-1190 |
-100V,-0.68A,P-Ch Small-Signal MOSFET |
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Mfr.#: BSP316PL6327 OMO.#: OMO-BSP316PL6327-1190 |
Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSP316PL6327HTSA1 |
MOSFET P-CH 100V 0.68A SOT-223 |
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Mfr.#: BSP316S OMO.#: OMO-BSP316S-1190 |
Neu und Original |