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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSP315E-6327 | Infineon Technologies AG | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET | 1000 | |
| BSP315E-6327 | SIEMENS SEMICONDUCTOR | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET | 801 |
|
| BSP315 E6327 | Siemens | 2000 | ||
| BSP315E6327 | Infineon Technologies AG | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 8900 | |
| BSP315E6327 | Siemens | INSTOCK | 22240 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: BSP315P H6327 OMO.#: OMO-BSP315P-H6327 |
MOSFET P-Ch -60V -1.17A SOT-223-3 |
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Mfr.#: BSP315 E6327 OMO.#: OMO-BSP315-E6327-1190 |
Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSP315E-6327 OMO.#: OMO-BSP315E-6327-1190 |
1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
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Mfr.#: BSP315E-6327,1N4148W-7-F |
Neu und Original |
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Mfr.#: BSP315E-6433 OMO.#: OMO-BSP315E-6433-1190 |
INSTOCK |
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Mfr.#: BSP315P OMO.#: OMO-BSP315P-1190 |
P CHANNEL MOSFET, -60V, 1.17A, SOT-223, Transistor Polarity:P Channel, Continuous Drain Current Id:1.17A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):0.8ohm, Rds(on) Test Voltage Vgs:-10 |
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Mfr.#: BSP315P E6327 OMO.#: OMO-BSP315P-E6327-1190 |
Neu und Original |
|
|
Mfr.#: BSP315P H6327 OMO.#: OMO-BSP315P-H6327-1190 |
MOSFET P-Ch -60V -1.17A SOT-223-3 |
|
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Mfr.#: BSP315PH6327 OMO.#: OMO-BSP315PH6327-1190 |
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSP315PH6327XTSA1 |
MOSFET P-CH 60V 1.17A SOT-223 |