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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RF1S9540 | Harris Semiconductor | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 7199 |
|
| RF1S9540 | Harris Semiconductor | 6 |
| |
| RF1S9540SM9A | HARTING Technology Group | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2718 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RF1S30P05SM9A OMO.#: OMO-RF1S30P05SM9A-1190 |
Neu und Original |
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Mfr.#: RF1S42N03LSM OMO.#: OMO-RF1S42N03LSM-1190 |
42 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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Mfr.#: RF1S42N03LSM9AS2495 OMO.#: OMO-RF1S42N03LSM9AS2495-1190 |
Neu und Original |
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Mfr.#: RF1S45N02 OMO.#: OMO-RF1S45N02-1190 |
Neu und Original |
|
|
Mfr.#: RF1S4N100SM OMO.#: OMO-RF1S4N100SM-1190 |
MOSFET TO-263 |
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Mfr.#: RF1S50N06LSM OMO.#: OMO-RF1S50N06LSM-1190 |
Neu und Original |
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Mfr.#: RF1S630 OMO.#: OMO-RF1S630-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
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Mfr.#: RF1S9530 OMO.#: OMO-RF1S9530-1190 |
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
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Mfr.#: RF1SA45N06SM9A OMO.#: OMO-RF1SA45N06SM9A-1190 |
Neu und Original |
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Mfr.#: RF1ST52A470J OMO.#: OMO-RF1ST52A470J-1190 |
Neu und Original |
