RF1S45N02

RF1S45N02
Mfr. #:
RF1S45N02
Hersteller:
FSC
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RF1S45N02 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
FSC
Produktkategorie
IC-Chips
Tags
RF1S45N02, RF1S45, RF1S4, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
RF1S45N02LHarris SemiconductorPower Field-Effect Transistor, 45A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Not Compliant
1576
  • 1000:$0.5100
  • 500:$0.5400
  • 100:$0.5600
  • 25:$0.5900
  • 1:$0.6300
RF1S45N02LSMHarris SemiconductorPower Field-Effect Transistor, 45A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
800
  • 1000:$0.4600
  • 500:$0.4900
  • 100:$0.5100
  • 25:$0.5300
  • 1:$0.5700
RF1S45N02LSM9AHarris SemiconductorPower Field-Effect Transistor, 45A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
2400
  • 1000:$0.4700
  • 500:$0.5000
  • 100:$0.5200
  • 25:$0.5400
  • 1:$0.5800
Bild Teil # Beschreibung
RF1S01

Mfr.#: RF1S01

OMO.#: OMO-RF1S01-1190

Neu und Original
RF1S30N06LESM9A

Mfr.#: RF1S30N06LESM9A

OMO.#: OMO-RF1S30N06LESM9A-1190

Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S30P03

Mfr.#: RF1S30P03

OMO.#: OMO-RF1S30P03-1190

Neu und Original
RF1S30P05+SM

Mfr.#: RF1S30P05+SM

OMO.#: OMO-RF1S30P05-SM-1190

- Bulk (Alt: RF1S30P05SM)
RF1S30P05SM

Mfr.#: RF1S30P05SM

OMO.#: OMO-RF1S30P05SM-1190

- Bulk (Alt: RF1S30P05SM)
RF1S30P06SM

Mfr.#: RF1S30P06SM

OMO.#: OMO-RF1S30P06SM-1190

Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S40N10LESM9A

Mfr.#: RF1S40N10LESM9A

OMO.#: OMO-RF1S40N10LESM9A-1190

MOSFET 100V Single
RF1S45N03LSNM9A

Mfr.#: RF1S45N03LSNM9A

OMO.#: OMO-RF1S45N03LSNM9A-1190

Neu und Original
RF1S45N06LESM

Mfr.#: RF1S45N06LESM

OMO.#: OMO-RF1S45N06LESM-1190

Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1SA45N06SM9A

Mfr.#: RF1SA45N06SM9A

OMO.#: OMO-RF1SA45N06SM9A-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von RF1S45N02 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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