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RF1S4

RF1S40N10 vs RF1S40N10LE vs RF1S40N10LESM

 
PartNumberRF1S40N10RF1S40N10LERF1S40N10LESM
DescriptionMOSFETPower Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
ManufacturerINTERSIL--
Product CategoryIC Chips--
Hersteller Teil # Beschreibung RFQ
RF1S40N10 MOSFET
RF1S40N10LE Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S40N10LESM Neu und Original
RF1S40N10LESM9A MOSFET 100V Single
RF1S40N10LESM9AR4363 Neu und Original
RF1S40N10SM Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S40N10SM9A MOSFET
RF1S41N03LSM Neu und Original
RF1S42N03LSM 42 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RF1S42N03LSM9A Neu und Original
RF1S42N03LSM9AS2495 Neu und Original
RF1S45N02 Neu und Original
RF1S45N02L Power Field-Effect Transistor, 45A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S45N02LSM Power Field-Effect Transistor, 45A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S45N03L Power Field-Effect Transistor, 45A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S45N03LSM 45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RF1S45N03LSM9A Neu und Original
RF1S45N03LSNM9A Neu und Original
RF1S45N06 Neu und Original
RF1S45N06LE Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S45N06LESM Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S45N06LSM Neu und Original
RF1S45N06S Neu und Original
RF1S45N06SM Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S45N06SM9A Neu und Original
RF1S4N100 Neu und Original
RF1S4N100SM MOSFET TO-263
RF1S4N100SM9A Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S4ON10SM Neu und Original
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