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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RF1S45N06LE | Harris Semiconductor | Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 1530 |
|
| RF1S45N06LESM | Harris Semiconductor | Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 843 |
|
| RF1S45N06LESM9A | Harris Semiconductor | Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 1600 |
|
| RF1S45N06SM | Harris Semiconductor | Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 700 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RF1S25N06SM OMO.#: OMO-RF1S25N06SM-1190 |
Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: RF1S25N06SM9A OMO.#: OMO-RF1S25N06SM9A-1190 |
Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: RF1S30P05SM OMO.#: OMO-RF1S30P05SM-1190 |
- Bulk (Alt: RF1S30P05SM) |
|
Mfr.#: RF1S30P06SM9AS OMO.#: OMO-RF1S30P06SM9AS-1190 |
Neu und Original |
|
Mfr.#: RF1S40N10 OMO.#: OMO-RF1S40N10-1190 |
MOSFET |
|
Mfr.#: RF1S40N10SM9A OMO.#: OMO-RF1S40N10SM9A-1190 |
MOSFET |
|
Mfr.#: RF1S45N06LE OMO.#: OMO-RF1S45N06LE-1190 |
Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
Mfr.#: RF1S630 OMO.#: OMO-RF1S630-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: RF1S70N03SM9A OMO.#: OMO-RF1S70N03SM9A-1190 |
Neu und Original |
|
Mfr.#: RF1S9640SM9A OMO.#: OMO-RF1S9640SM9A-1190 |
MOSFET TO-263 |