RF1S45N06

RF1S45N06
Mfr. #:
RF1S45N06
Hersteller:
Harris Semiconductor
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RF1S45N06 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
RF1S45N06, RF1S45, RF1S4, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
RF1S45N06LEHarris SemiconductorPower Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Not Compliant
1530
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
RF1S45N06LESMHarris SemiconductorPower Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
843
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
RF1S45N06LESM9AHarris SemiconductorPower Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
1600
  • 1000:$0.8600
  • 500:$0.9000
  • 100:$0.9400
  • 25:$0.9800
  • 1:$1.0500
RF1S45N06SMHarris SemiconductorPower Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
700
  • 1000:$0.8400
  • 500:$0.8900
  • 100:$0.9200
  • 25:$0.9600
  • 1:$1.0400
Bild Teil # Beschreibung
RF1S25N06SM

Mfr.#: RF1S25N06SM

OMO.#: OMO-RF1S25N06SM-1190

Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S25N06SM9A

Mfr.#: RF1S25N06SM9A

OMO.#: OMO-RF1S25N06SM9A-1190

Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S30P05SM

Mfr.#: RF1S30P05SM

OMO.#: OMO-RF1S30P05SM-1190

- Bulk (Alt: RF1S30P05SM)
RF1S30P06SM9AS

Mfr.#: RF1S30P06SM9AS

OMO.#: OMO-RF1S30P06SM9AS-1190

Neu und Original
RF1S40N10

Mfr.#: RF1S40N10

OMO.#: OMO-RF1S40N10-1190

MOSFET
RF1S40N10SM9A

Mfr.#: RF1S40N10SM9A

OMO.#: OMO-RF1S40N10SM9A-1190

MOSFET
RF1S45N06LE

Mfr.#: RF1S45N06LE

OMO.#: OMO-RF1S45N06LE-1190

Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S630

Mfr.#: RF1S630

OMO.#: OMO-RF1S630-1190

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S70N03SM9A

Mfr.#: RF1S70N03SM9A

OMO.#: OMO-RF1S70N03SM9A-1190

Neu und Original
RF1S9640SM9A

Mfr.#: RF1S9640SM9A

OMO.#: OMO-RF1S9640SM9A-1190

MOSFET TO-263
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von RF1S45N06 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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