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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
RF1S30P06SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 8000 |
|
RF1S30P06SM9A | Harris Semiconductor | 30A, 60V, 0.065ohm, P-Channel, POWER MOSFET RoHS: Not Compliant | 800 |
|
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: RF1S30P03 OMO.#: OMO-RF1S30P03-1190 |
Neu und Original | |
Mfr.#: RF1S30P05 OMO.#: OMO-RF1S30P05-1190 |
Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | |
Mfr.#: RF1S30P05+SM OMO.#: OMO-RF1S30P05-SM-1190 |
- Bulk (Alt: RF1S30P05SM) | |
Mfr.#: RF1S30P05SM OMO.#: OMO-RF1S30P05SM-1190 |
- Bulk (Alt: RF1S30P05SM) | |
Mfr.#: RF1S30P05SM9A OMO.#: OMO-RF1S30P05SM9A-1190 |
Neu und Original | |
Mfr.#: RF1S30P06 OMO.#: OMO-RF1S30P06-1190 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | |
Mfr.#: RF1S30P06SM OMO.#: OMO-RF1S30P06SM-1190 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: RF1S30P06SM9A OMO.#: OMO-RF1S30P06SM9A-1190 |
MOSFET -60V Single | |
Mfr.#: RF1S30P06SM9AS OMO.#: OMO-RF1S30P06SM9AS-1190 |
Neu und Original |