RF1S30P03

RF1S30P03
Mfr. #:
RF1S30P03
Hersteller:
Harris Semiconductor
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RF1S30P03 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
RF1S30P, RF1S30, RF1S3, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
RF1S30P05SM
DISTI # RF1S30P05SM
Renesas Electronics Corporation- Bulk (Alt: RF1S30P05SM)
RoHS: Not Compliant
Min Qty: 410
Container: Bulk
Americas - 0
  • 4100:$0.7367
  • 2050:$0.7466
  • 1230:$0.7683
  • 820:$0.7912
  • 410:$0.8155
IRF1S30P05SMHarris Semiconductor 
RoHS: Not Compliant
400
  • 1000:$1.1800
  • 500:$1.2500
  • 100:$1.3000
  • 25:$1.3500
  • 1:$1.4600
RF1S30P05Harris SemiconductorPower Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Not Compliant
1040
  • 1000:$0.8000
  • 500:$0.8500
  • 100:$0.8800
  • 25:$0.9200
  • 1:$0.9900
RF1S30P05SMHarris SemiconductorPower Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
92
  • 1000:$0.8000
  • 500:$0.8500
  • 100:$0.8800
  • 25:$0.9200
  • 1:$0.9900
RF1S30P05SMFairchild Semiconductor Corporation 139
    RF1S30P05SMIntersil Corporation 45
      Bild Teil # Beschreibung
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      OMO.#: OMO-RF1S30P06-1190

      Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RF1S40N10LESM9AR4363

      Mfr.#: RF1S40N10LESM9AR4363

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      RF1S50N06

      Mfr.#: RF1S50N06

      OMO.#: OMO-RF1S50N06-1190

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      RF1S50N06SM9A

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      OMO.#: OMO-RF1S50N06SM9A-1190

      Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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      Mfr.#: RF1S640SMA

      OMO.#: OMO-RF1S640SMA-1190

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      Mfr.#: RF1S840S

      OMO.#: OMO-RF1S840S-1190

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      Mfr.#: RF1S9540SM

      OMO.#: OMO-RF1S9540SM-1190

      Neu und Original
      RF1S9540SM9A

      Mfr.#: RF1S9540SM9A

      OMO.#: OMO-RF1S9540SM9A-1190

      Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RF1S9640H022

      Mfr.#: RF1S9640H022

      OMO.#: OMO-RF1S9640H022-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von RF1S30P03 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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