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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RF1S9540SM9A | HARTING Technology Group | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2718 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RF1S9530 OMO.#: OMO-RF1S9530-1190 |
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S9530SM OMO.#: OMO-RF1S9530SM-1190 |
Neu und Original |
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Mfr.#: RF1S9540 OMO.#: OMO-RF1S9540-1190 |
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S9540SM OMO.#: OMO-RF1S9540SM-1190 |
Neu und Original |
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Mfr.#: RF1S9630SM OMO.#: OMO-RF1S9630SM-1190 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S9630SM9A OMO.#: OMO-RF1S9630SM9A-1190 |
Neu und Original |
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Mfr.#: RF1S9640 OMO.#: OMO-RF1S9640-1190 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S9640H022 OMO.#: OMO-RF1S9640H022-1190 |
Neu und Original |
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Mfr.#: RF1S9640SM OMO.#: OMO-RF1S9640SM-1190 |
Neu und Original |
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Mfr.#: RF1S9640SM9A OMO.#: OMO-RF1S9640SM9A-1190 |
MOSFET TO-263 |