We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RF1S9640SM9A DISTI # 512-RF1S9640SM9A | ON Semiconductor | MOSFET TO-263 RoHS: Not compliant | 0 | |
| RF1S9640SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 1600 |
|
| RF1S9640 | Harris Semiconductor | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 4500 |
|
| RF1S9640SM9A | Harris Semiconductor | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 775 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RF1S01 OMO.#: OMO-RF1S01-1190 |
Neu und Original |
|
|
Mfr.#: RF1S15N06SM OMO.#: OMO-RF1S15N06SM-1190 |
Power Field-Effect Transistor, 15A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: RF1S30N06LESM 9AR4365 |
Neu und Original |
|
|
Mfr.#: RF1S40N10LESM9A OMO.#: OMO-RF1S40N10LESM9A-1190 |
MOSFET 100V Single |
|
|
Mfr.#: RF1S41N03LSM OMO.#: OMO-RF1S41N03LSM-1190 |
Neu und Original |
|
|
Mfr.#: RF1S530SM9A OMO.#: OMO-RF1S530SM9A-1190 |
Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: RF1S540 OMO.#: OMO-RF1S540-1190 |
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
|
Mfr.#: RF1S630SM OMO.#: OMO-RF1S630SM-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: RF1S70N03SM OMO.#: OMO-RF1S70N03SM-1190 |
Neu und Original |
|
|
Mfr.#: RF1S9540 OMO.#: OMO-RF1S9540-1190 |
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
