RF1S630SM

RF1S630SM
Mfr. #:
RF1S630SM
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RF1S630SM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
RF1S63, RF1S6, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
RF1S630SMHarris SemiconductorPower Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
2098
  • 1000:$0.9500
  • 500:$1.0000
  • 100:$1.0400
  • 25:$1.0800
  • 1:$1.1700
RF1S630SM9AHarris SemiconductorPower Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
4000
  • 1000:$0.9900
  • 500:$1.0400
  • 100:$1.0800
  • 25:$1.1300
  • 1:$1.2200
RF1S630SMHarris Semiconductor 30
    Bild Teil # Beschreibung
    RF1S 3R3J

    Mfr.#: RF1S 3R3J

    OMO.#: OMO-RF1S-3R3J-1190

    Neu und Original
    RF1S25N06SM

    Mfr.#: RF1S25N06SM

    OMO.#: OMO-RF1S25N06SM-1190

    Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S40N10LESM9A

    Mfr.#: RF1S40N10LESM9A

    OMO.#: OMO-RF1S40N10LESM9A-1190

    MOSFET 100V Single
    RF1S45N06S

    Mfr.#: RF1S45N06S

    OMO.#: OMO-RF1S45N06S-1190

    Neu und Original
    RF1S45N06SM

    Mfr.#: RF1S45N06SM

    OMO.#: OMO-RF1S45N06SM-1190

    Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S50N06SM

    Mfr.#: RF1S50N06SM

    OMO.#: OMO-RF1S50N06SM-1190

    Neu und Original
    RF1S540SM

    Mfr.#: RF1S540SM

    OMO.#: OMO-RF1S540SM-1190

    Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S630

    Mfr.#: RF1S630

    OMO.#: OMO-RF1S630-1190

    Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S9540SM

    Mfr.#: RF1S9540SM

    OMO.#: OMO-RF1S9540SM-1190

    Neu und Original
    RF1S9640SM9A

    Mfr.#: RF1S9640SM9A

    OMO.#: OMO-RF1S9640SM9A-1190

    MOSFET TO-263
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von RF1S630SM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,42 $
    1,42 $
    10
    1,35 $
    13,54 $
    100
    1,28 $
    128,25 $
    500
    1,21 $
    605,65 $
    1000
    1,14 $
    1 140,00 $
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