RF1S 3R3J

RF1S 3R3J
Mfr. #:
RF1S 3R3J
Hersteller:
Harris Semiconductor
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RF1S 3R3J Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
RF1S3, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
RF1S30P05SM
DISTI # RF1S30P05SM
Renesas Electronics Corporation- Bulk (Alt: RF1S30P05SM)
RoHS: Not Compliant
Min Qty: 410
Container: Bulk
Americas - 0
  • 4100:$0.7367
  • 2050:$0.7466
  • 1230:$0.7683
  • 820:$0.7912
  • 410:$0.8155
IRF1S30P05SMHarris Semiconductor 
RoHS: Not Compliant
400
  • 1000:$1.1800
  • 500:$1.2500
  • 100:$1.3000
  • 25:$1.3500
  • 1:$1.4600
RF1S30P05Harris SemiconductorPower Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Not Compliant
1040
  • 1000:$0.8000
  • 500:$0.8500
  • 100:$0.8800
  • 25:$0.9200
  • 1:$0.9900
RF1S30P05SMHarris SemiconductorPower Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
92
  • 1000:$0.8000
  • 500:$0.8500
  • 100:$0.8800
  • 25:$0.9200
  • 1:$0.9900
RF1S30P05SMFairchild Semiconductor Corporation 139
    RF1S30P05SMIntersil Corporation 45
      Bild Teil # Beschreibung
      RF1S25N06

      Mfr.#: RF1S25N06

      OMO.#: OMO-RF1S25N06-1190

      - Bulk (Alt: RF1S25N06)
      RF1S30P06SM

      Mfr.#: RF1S30P06SM

      OMO.#: OMO-RF1S30P06SM-1190

      Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RF1S40N10SM

      Mfr.#: RF1S40N10SM

      OMO.#: OMO-RF1S40N10SM-1190

      Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RF1S45N02LSM

      Mfr.#: RF1S45N02LSM

      OMO.#: OMO-RF1S45N02LSM-1190

      Power Field-Effect Transistor, 45A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RF1S45N03LSNM9A

      Mfr.#: RF1S45N03LSNM9A

      OMO.#: OMO-RF1S45N03LSNM9A-1190

      Neu und Original
      RF1S530

      Mfr.#: RF1S530

      OMO.#: OMO-RF1S530-1190

      Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      RF1S60P03

      Mfr.#: RF1S60P03

      OMO.#: OMO-RF1S60P03-1190

      Neu und Original
      RF1S60P03SM

      Mfr.#: RF1S60P03SM

      OMO.#: OMO-RF1S60P03SM-1190

      MOSFET Transistor, P-Channel, TO-263AB
      RF1S640SM9A

      Mfr.#: RF1S640SM9A

      OMO.#: OMO-RF1S640SM9A-1190

      MOSFET Transistor, N-Channel, TO-263AB
      RF1S70N06DPAK

      Mfr.#: RF1S70N06DPAK

      OMO.#: OMO-RF1S70N06DPAK-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von RF1S 3R3J dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
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      Beginnen mit
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