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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RF1S60P03SM9A | Intersil Corporation | 32 | ||
| RF1S60P03SM | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-263AB | 15 | |
| RF1S60P03SM9A | Harris Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 30V, 0.027OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 237 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RF1S30N06LE OMO.#: OMO-RF1S30N06LE-1190 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S30N06LESM9A OMO.#: OMO-RF1S30N06LESM9A-1190 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S30N06LSM OMO.#: OMO-RF1S30N06LSM-1190 |
Neu und Original |
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Mfr.#: RF1S42N03LSM9AS2495 OMO.#: OMO-RF1S42N03LSM9AS2495-1190 |
Neu und Original |
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Mfr.#: RF1S45N06SM OMO.#: OMO-RF1S45N06SM-1190 |
Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S50N06 LESM OMO.#: OMO-RF1S50N06-LESM-1190 |
Neu und Original |
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Mfr.#: RF1S50N06SM OMO.#: OMO-RF1S50N06SM-1190 |
Neu und Original |
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Mfr.#: RF1S630SM OMO.#: OMO-RF1S630SM-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S640SM OMO.#: OMO-RF1S640SM-1190 |
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-263AB - Bulk (Alt: RF1S640SM) |
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Mfr.#: RF1SL15 R47J OMO.#: OMO-RF1SL15-R47J-1190 |
Neu und Original |