RF1S530SM9A

RF1S530SM9A
Mfr. #:
RF1S530SM9A
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RF1S530SM9A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
RF1S53, RF1S5, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
RF1S530SM9AFairchild Semiconductor CorporationPower Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant
20800
  • 1000:$0.8700
  • 500:$0.9100
  • 100:$0.9500
  • 25:$0.9900
  • 1:$1.0700
RF1S530SM9AHarris SemiconductorPower Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant
800
  • 1000:$0.8700
  • 500:$0.9100
  • 100:$0.9500
  • 25:$0.9900
  • 1:$1.0700
RF1S530SM9AS2457Harris Semiconductor 
RoHS: Not Compliant
800
  • 1000:$0.8700
  • 500:$0.9100
  • 100:$0.9500
  • 25:$0.9900
  • 1:$1.0700
Bild Teil # Beschreibung
RF1S50N06

Mfr.#: RF1S50N06

OMO.#: OMO-RF1S50N06-1190

Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S50N06LESM

Mfr.#: RF1S50N06LESM

OMO.#: OMO-RF1S50N06LESM-1190

Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S50N06LSM

Mfr.#: RF1S50N06LSM

OMO.#: OMO-RF1S50N06LSM-1190

Neu und Original
RF1S50N06LSM9A

Mfr.#: RF1S50N06LSM9A

OMO.#: OMO-RF1S50N06LSM9A-1190

Neu und Original
RF1S50N06SM

Mfr.#: RF1S50N06SM

OMO.#: OMO-RF1S50N06SM-1190

Neu und Original
RF1S530

Mfr.#: RF1S530

OMO.#: OMO-RF1S530-1190

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RF1S530SM9A

Mfr.#: RF1S530SM9A

OMO.#: OMO-RF1S530SM9A-1190

Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RF1S540

Mfr.#: RF1S540

OMO.#: OMO-RF1S540-1190

Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S540S

Mfr.#: RF1S540S

OMO.#: OMO-RF1S540S-1190

Neu und Original
RF1S530SM9AS2457

Mfr.#: RF1S530SM9AS2457

OMO.#: OMO-RF1S530SM9AS2457-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von RF1S530SM9A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,30 $
1,30 $
10
1,24 $
12,40 $
100
1,17 $
117,45 $
500
1,11 $
554,65 $
1000
1,04 $
1 044,00 $
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