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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RF1S540SM DISTI # RF1S540SM | Renesas Electronics Corporation | - Bulk (Alt: RF1S540SM) RoHS: Not Compliant Min Qty: 163 Container: Bulk | Americas - 0 |
|
| RF1S540SM | Harris Semiconductor | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 3 |
|
| RF1S540SM9A | Harris Semiconductor | 28A, 100V, 0.077OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263AB | 3200 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RF1S15N08LSM OMO.#: OMO-RF1S15N08LSM-1190 |
Neu und Original |
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Mfr.#: RF1S17N06LSM OMO.#: OMO-RF1S17N06LSM-1190 |
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S22N10SM OMO.#: OMO-RF1S22N10SM-1190 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S30P03 OMO.#: OMO-RF1S30P03-1190 |
Neu und Original |
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Mfr.#: RF1S4ON10SM OMO.#: OMO-RF1S4ON10SM-1190 |
Neu und Original |
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Mfr.#: RF1S50N06 OMO.#: OMO-RF1S50N06-1190 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S60P03SM OMO.#: OMO-RF1S60P03SM-1190 |
MOSFET Transistor, P-Channel, TO-263AB |
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Mfr.#: RF1S70N06SM9A OMO.#: OMO-RF1S70N06SM9A-1190 |
MOSFET TO-263 |
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Mfr.#: RF1S9630 OMO.#: OMO-RF1S9630-1190 |
Transisto |
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Mfr.#: RF1S9640 OMO.#: OMO-RF1S9640-1190 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |