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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RF1S9630 | Harris Semiconductor | Transistor RoHS: Not Compliant | 2400 |
|
| RF1S9630SM | Harris Semiconductor | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 1650 |
|
| RF1S9630 | Harris Semiconductor | 37 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RF1S15N06 OMO.#: OMO-RF1S15N06-1190 |
Power Field-Effect Transistor, 15A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: RF1S25N06SM OMO.#: OMO-RF1S25N06SM-1190 |
Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: RF1S41N03LSM OMO.#: OMO-RF1S41N03LSM-1190 |
Neu und Original |
|
Mfr.#: RF1S45N02L OMO.#: OMO-RF1S45N02L-1190 |
Power Field-Effect Transistor, 45A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
Mfr.#: RF1S45N03L OMO.#: OMO-RF1S45N03L-1190 |
Power Field-Effect Transistor, 45A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
Mfr.#: RF1S45N03LSNM9A OMO.#: OMO-RF1S45N03LSNM9A-1190 |
Neu und Original |
|
Mfr.#: RF1S50N06SM OMO.#: OMO-RF1S50N06SM-1190 |
Neu und Original |
|
Mfr.#: RF1S640SM9A_NL OMO.#: OMO-RF1S640SM9A-NL-1190 |
Neu und Original |
|
Mfr.#: RF1S9640H022 OMO.#: OMO-RF1S9640H022-1190 |
Neu und Original |
|
Mfr.#: RF1SA45N06SM9A OMO.#: OMO-RF1SA45N06SM9A-1190 |
Neu und Original |