RF1S45N03L

RF1S45N03L
Mfr. #:
RF1S45N03L
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 45A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RF1S45N03L Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
HITACHI
Produktkategorie
IC-Chips
Tags
RF1S45N03, RF1S45, RF1S4, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
RF1S45N03LHarris SemiconductorPower Field-Effect Transistor, 45A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Not Compliant
770
  • 1000:$0.8200
  • 500:$0.8600
  • 100:$0.8900
  • 25:$0.9300
  • 1:$1.0000
RF1S45N03LSMHarris Semiconductor45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB620
  • 616:$0.9375
  • 287:$0.9750
  • 1:$3.0000
RF1S45N03LSMHarris Semiconductor 775
  • 3:$2.2500
  • 10:$1.6875
  • 31:$1.4062
  • 108:$0.8438
  • 357:$0.7875
Bild Teil # Beschreibung
RF1S40N10

Mfr.#: RF1S40N10

OMO.#: OMO-RF1S40N10-1190

MOSFET
RF1S40N10LE

Mfr.#: RF1S40N10LE

OMO.#: OMO-RF1S40N10LE-1190

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S45N03L

Mfr.#: RF1S45N03L

OMO.#: OMO-RF1S45N03L-1190

Power Field-Effect Transistor, 45A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S45N03LSM

Mfr.#: RF1S45N03LSM

OMO.#: OMO-RF1S45N03LSM-1190

45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RF1S45N06

Mfr.#: RF1S45N06

OMO.#: OMO-RF1S45N06-1190

Neu und Original
RF1S45N06LE

Mfr.#: RF1S45N06LE

OMO.#: OMO-RF1S45N06LE-1190

Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S45N06LESM

Mfr.#: RF1S45N06LESM

OMO.#: OMO-RF1S45N06LESM-1190

Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S45N06S

Mfr.#: RF1S45N06S

OMO.#: OMO-RF1S45N06S-1190

Neu und Original
RF1S4N100SM

Mfr.#: RF1S4N100SM

OMO.#: OMO-RF1S4N100SM-1190

MOSFET TO-263
RF1S4N100SM9A

Mfr.#: RF1S4N100SM9A

OMO.#: OMO-RF1S4N100SM9A-1190

Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von RF1S45N03L dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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