RF1S22N10SM

RF1S22N10SM
Mfr. #:
RF1S22N10SM
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RF1S22N10SM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
RF1S2, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
RF1S22N10SM9A
DISTI # 512-RF1S22N10SM9A
ON SemiconductorMOSFET 100V Single
RoHS: Not compliant
0
    RF1S22N10SMHarris SemiconductorPower Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant
    3853
    • 1000:$0.7200
    • 500:$0.7600
    • 100:$0.7900
    • 25:$0.8300
    • 1:$0.8900
    Bild Teil # Beschreibung
    RF1S22N10SM

    Mfr.#: RF1S22N10SM

    OMO.#: OMO-RF1S22N10SM-1190

    Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S22N10SM9A

    Mfr.#: RF1S22N10SM9A

    OMO.#: OMO-RF1S22N10SM9A-1190

    MOSFET 100V Single
    RF1S23N06LE

    Mfr.#: RF1S23N06LE

    OMO.#: OMO-RF1S23N06LE-1190

    Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RF1S23N06LESM

    Mfr.#: RF1S23N06LESM

    OMO.#: OMO-RF1S23N06LESM-1190

    Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S25N06

    Mfr.#: RF1S25N06

    OMO.#: OMO-RF1S25N06-1190

    - Bulk (Alt: RF1S25N06)
    RF1S25N06S3S

    Mfr.#: RF1S25N06S3S

    OMO.#: OMO-RF1S25N06S3S-1190

    Neu und Original
    RF1S25N06SM

    Mfr.#: RF1S25N06SM

    OMO.#: OMO-RF1S25N06SM-1190

    Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S25N06SM9A

    Mfr.#: RF1S25N06SM9A

    OMO.#: OMO-RF1S25N06SM9A-1190

    Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S25N06SMR4643

    Mfr.#: RF1S25N06SMR4643

    OMO.#: OMO-RF1S25N06SMR4643-1190

    Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von RF1S22N10SM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,08 $
    1,08 $
    10
    1,03 $
    10,26 $
    100
    0,97 $
    97,20 $
    500
    0,92 $
    459,00 $
    1000
    0,86 $
    864,00 $
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