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RF1S2

RF1S22N10SM vs RF1S22N10SM9A vs RF1S23N06LE

 
PartNumberRF1S22N10SMRF1S22N10SM9ARF1S23N06LE
DescriptionPower Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263ABMOSFET 100V SinglePower Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Hersteller Teil # Beschreibung RFQ
RF1S22N10SM Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S22N10SM9A MOSFET 100V Single
RF1S23N06LE Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S23N06LESM Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S25N06 - Bulk (Alt: RF1S25N06)
RF1S25N06S3S Neu und Original
RF1S25N06SM Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S25N06SM9A Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S25N06SMR4643 Neu und Original
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