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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RF1S23N06LESM | Harris Semiconductor | Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 5549 |
|
| RF1S23N06LESM9A | Harris Semiconductor | Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 800 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RF1S23N06LE OMO.#: OMO-RF1S23N06LE-1190 |
Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
|
Mfr.#: RF1S23N06LESM OMO.#: OMO-RF1S23N06LESM-1190 |
Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
