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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RF1S23N06LE | Harris Semiconductor | Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 2400 |
|
| RF1S23N06LESM | Harris Semiconductor | Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 5549 |
|
| RF1S23N06LESM9A | Harris Semiconductor | Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 800 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RF1S22N10SM OMO.#: OMO-RF1S22N10SM-1190 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S22N10SM9A OMO.#: OMO-RF1S22N10SM9A-1190 |
MOSFET 100V Single |
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Mfr.#: RF1S23N06LE OMO.#: OMO-RF1S23N06LE-1190 |
Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S23N06LESM OMO.#: OMO-RF1S23N06LESM-1190 |
Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S25N06 OMO.#: OMO-RF1S25N06-1190 |
- Bulk (Alt: RF1S25N06) |
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Mfr.#: RF1S25N06S3S OMO.#: OMO-RF1S25N06S3S-1190 |
Neu und Original |
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Mfr.#: RF1S25N06SM OMO.#: OMO-RF1S25N06SM-1190 |
Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S25N06SM9A OMO.#: OMO-RF1S25N06SM9A-1190 |
Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S25N06SMR4643 OMO.#: OMO-RF1S25N06SMR4643-1190 |
Neu und Original |
