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RF1S640SMA

RF1S640SMA
Mfr. #:
RF1S640SMA
Hersteller:
Fairchild Semiconductor Corporation
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RF1S640SMA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
RF1S640S, RF1S64, RF1S6, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
RF1S640SM9AFairchild Semiconductor CorporationMOSFET Transistor, N-Channel, TO-263AB698
  • 193:$2.4000
  • 68:$2.6000
  • 1:$6.0000
RF1S640SM9AHarris SemiconductorMOSFET Transistor, N-Channel, TO-263AB81
  • 68:$2.6000
  • 7:$3.0000
  • 1:$6.0000
RF1S640SM9AIntersil Corporation 11191
    RF1S640SM9AHARTING Technology Group 2400
      Bild Teil # Beschreibung
      RF1S60P03SM

      Mfr.#: RF1S60P03SM

      OMO.#: OMO-RF1S60P03SM-1190

      		 MOSFET Transistor, P-Channel, TO-263AB
      RF1S60P03SM9A

      Mfr.#: RF1S60P03SM9A

      OMO.#: OMO-RF1S60P03SM9A-1190

      		 POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 30V, 0.027OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
      RF1S630

      Mfr.#: RF1S630

      OMO.#: OMO-RF1S630-1190

      		 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RF1S630SM

      Mfr.#: RF1S630SM

      OMO.#: OMO-RF1S630SM-1190

      		 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RF1S630SM9A

      Mfr.#: RF1S630SM9A

      OMO.#: OMO-RF1S630SM9A-1190

      		 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RF1S640SM

      Mfr.#: RF1S640SM

      OMO.#: OMO-RF1S640SM-1190

      		 Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-263AB - Bulk (Alt: RF1S640SM)
      RF1S640SM9A

      Mfr.#: RF1S640SM9A

      OMO.#: OMO-RF1S640SM9A-1190

      		 MOSFET Transistor, N-Channel, TO-263AB
      RF1S640SM9A9A

      Mfr.#: RF1S640SM9A9A

      OMO.#: OMO-RF1S640SM9A9A-1190

      		 Neu und Original
      RF1S640SM9A_NL

      Mfr.#: RF1S640SM9A_NL

      OMO.#: OMO-RF1S640SM9A-NL-1190

      		 Neu und Original
      RF1S640SMA

      Mfr.#: RF1S640SMA

      OMO.#: OMO-RF1S640SMA-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von RF1S640SMA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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