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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RF1S4N100SM DISTI # 512-RF1S4N100SM | ON Semiconductor | MOSFET TO-263 RoHS: Not compliant | 0 | |
| RF1S4N100SM9A | Harris Semiconductor | Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 187 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RF1S30P05 OMO.#: OMO-RF1S30P05-1190 |
Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S30P06SM9A OMO.#: OMO-RF1S30P06SM9A-1190 |
MOSFET -60V Single |
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Mfr.#: RF1S30P06SM9AS OMO.#: OMO-RF1S30P06SM9AS-1190 |
Neu und Original |
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Mfr.#: RF1S45N06S OMO.#: OMO-RF1S45N06S-1190 |
Neu und Original |
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Mfr.#: RF1S4N100SM OMO.#: OMO-RF1S4N100SM-1190 |
MOSFET TO-263 |
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Mfr.#: RF1S50N06LSM9A OMO.#: OMO-RF1S50N06LSM9A-1190 |
Neu und Original |
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Mfr.#: RF1S630 OMO.#: OMO-RF1S630-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S70N03SMPA OMO.#: OMO-RF1S70N03SMPA-1190 |
Neu und Original |
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Mfr.#: RF1S70N06 OMO.#: OMO-RF1S70N06-1190 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S9530 OMO.#: OMO-RF1S9530-1190 |
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |