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SPD04N80C3ATMA1

SPD04N80C3ATMA1
Mfr. #:
SPD04N80C3ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET LOW POWER_LEGACY
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPD04N80C3ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SPD04N80C3ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
4 A
Rds On - Drain-Source-Widerstand:
1.1 Ohms
Vgs th - Gate-Source-Schwellenspannung:
2.1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
31 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
63 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS C3
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
72 ns
Typische Einschaltverzögerungszeit:
25 ns
Teil # Aliase:
SP001117768 SPD04N80C3
Gewichtseinheit:
0.139332 oz
Tags
SPD04N8, SPD04N, SPD04, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 1.3 Ohm 31 nC CoolMOS™ Power Mosfet - TO-252-3
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4A; Package / Case:TO-252; Power Dissipation Pd:63W; Pulse Current Idm:12A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
SPD04N80C3ATMA1
DISTI # 30617182		Infineon Technologies AGTrans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2200
  • 200:$1.1666
  • 100:$1.1781
  • 50:$1.2202
  • 12:$1.4917
SPD04N80C3ATMA1
DISTI # 26970908		Infineon Technologies AGTrans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2179
  • 11:$0.5865
SPD04N80C3ATMA1
DISTI # SPD04N80C3ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 800V 4A 3TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.7295
SPD04N80C3ATMA1
DISTI # SPD04N80C3ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 800V 4A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2500In Stock
  • 1000:$0.8051
  • 500:$1.0197
  • 100:$1.3149
  • 10:$1.6640
  • 1:$1.8800
SPD04N80C3ATMA1
DISTI # SPD04N80C3ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 800V 4A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2500In Stock
  • 1000:$0.8051
  • 500:$1.0197
  • 100:$1.3149
  • 10:$1.6640
  • 1:$1.8800
SPD04N80C3ATMA1
DISTI # V72:2272_06383641		Infineon Technologies AGTrans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2179
  • 1:$0.6489
SPD04N80C3ATMA1
DISTI # SPD04N80C3ATMA1		Infineon Technologies AGTrans MOSFET N-CH 800V 4A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD04N80C3ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.6819
  • 5000:$0.6569
  • 10000:$0.6339
  • 15000:$0.6119
  • 25000:$0.6009
SPD04N80C3ATMA1
DISTI # SP001117768		Infineon Technologies AGTrans MOSFET N-CH 800V 4A 3-Pin TO-252 T/R (Alt: SP001117768)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.9329
  • 5000:€0.7629
  • 10000:€0.6999
  • 15000:€0.6459
  • 25000:€0.5999
SPD04N80C3ATMA1
DISTI # 33P8206		Infineon Technologies AGMOSFET, N CHANNEL, 800V, 4A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Product Range:- RoHS Compliant: Yes0
  • 1000:$0.6350
  • 500:$0.8040
  • 250:$0.8570
  • 100:$0.9100
  • 50:$1.0000
  • 25:$1.1000
  • 10:$1.1900
  • 1:$1.3900
SPD04N80C3ATMA1
DISTI # 726-SPD04N80C3ATMA1		Infineon Technologies AGMOSFET LOW POWER_LEGACY
RoHS: Compliant		2475
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0100
  • 500:$0.9010
  • 1000:$0.7110
SPD04N80C3ATMA1
DISTI # 1664108		Infineon Technologies AGMOSFET, N, TO-252
RoHS: Compliant		386
  • 500:£0.6950
  • 250:£0.7370
  • 100:£0.7790
  • 25:£1.0100
  • 5:£1.1100
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Mfr.#: 709296001003006

OMO.#: OMO-709296001003006

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von SPD04N80C3ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,55 $
1,55 $
10
1,32 $
13,20 $
100
1,01 $
101,00 $
500
0,90 $
450,50 $
1000
0,71 $
711,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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